BFY181 Siemens Semiconductor Group, BFY181 Datasheet - Page 3
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BFY181
Manufacturer Part Number
BFY181
Description
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BFY181.pdf
(5 pages)
Semiconductor Group
Table 3
Parameter
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
Z
Power gain
I
Z
Transducer gain
I
Z
4)
C
C
C
C
C
S
S
S
CB
CE
EB
= 10 mA,
= 10 mA,
= 4 mA,
= 10 mA,
= 10 mA,
G
=
=
=
= 0.5 V,
= 10 V,
= 10 V,
ma
Z
Z
Z
Sopt
Sopt
L
= 50 W
=
,
Z
V
S21
---------- - k
S12
V
V
L
V
V
V
V
CE
V
=
BE
BE
CE
CE
CE
CE
CB
AC Characteristics at
= 5 V,
Z
(
= vbe = 0,
= vbe = 0,
= 5 V,
= 8 V,
= 5 V,
= 5 V,
= vcb = 0,
Lopt
Ð
f
k
2
f
f
f
f
= 2 GHz,
= 500 MHz
= 500 MHz
= 2 GHz,
= 2 GHz,
Ð
1
f
f
f
)
= 1 MHz
= 1 MHz
,
= 1 MHz
G
ms
=
T
S21
---------- -
S12
Symbol
f
C
C
C
F
G
½S
A
T
CB
CE
EB
= 25 °C unless otherwise specified
ma
21e
3
4)
½
2
min.
6.5
-
-
-
-
-
13.5
10
Limit Values
typ.
7.5
8
0.21
0.34
0.45
2.2
14.5
11
Draft A04 1998-04-01
max.
-
-
0.29
-
0.6
2.9
-
-
BFY 181
Unit
GHz
pF
pF
pF
dB
dB
dB