CR08AS Mitsubishi Electric Semiconductor, CR08AS Datasheet
CR08AS
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CR08AS Summary of contents
Page 1
... Conditions Commercial frequency, sine half wave, 180 conduction, T 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value CR08AS LOW POWER USE Dimensions in mm 4.4±0.1 1.5±0.1 1.6±0 0.5± ...
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... = =12V Junction to ambient t0.7 100 resistance between the gate and cathode CR08AS LOW POWER USE Limits Min. Typ. Max. — — 0.5 — — 0.5 — — 1.5 — — 0.8 0.2 — — 1 — 100 — ...
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... AVERAGE ON-STATE CURRENT (A) CR08AS LOW POWER USE 60 80 100 120 140 160 710 – TIME (s) 360° RESISTIVE, INDUCTIVE ...
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... BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 1.6 –40 – JUNCTION TEMPERATURE (°C) CR08AS LOW POWER USE 90° 120° 180° 360° RESISTIVE LOADS 0.8 1.0 1.2 1.4 1.6 90° 180° 270° DC 360° RESISTIVE, INDUCTIVE LOADS 0.8 1 ...
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... GATE CURRENT (mA) CR08AS LOW POWER USE T = 125° ( 0.9mA # 100V ...
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... BOARD DIMENSIONS 320 280 240 WITHOUT EPOXY PLATE 200 160 120 EPOXY PLATE WITH COPPER FOIL BOARD DIMENSIONS (mm) REGULAR SQUARE ONE SIDE CR08AS LOW POWER USE 60 80 100 120 140 160 t0.7 ALUMINUM BOARD Feb.1999 ...