CR08AS Mitsubishi Electric Semiconductor, CR08AS Datasheet - Page 5

• Manufacturer Part Number: CR08AS
• Description: LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
120
100
10
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
–1
–2
10
0
7
5
3
2
7
5
3
2
7
5
3
2
0
–60
1
0
10
GATE TO CATHODE RESISTANCE (k )
–1
DISTRIBUTION
0
R
GATE TO CATHODE RESISTANCE
T
TYPICAL EXAMPLE
–40
j
GK
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT (µA)
2 3
= 125°C
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER CURRENT
= 1k
–20
HOLDING CURRENT VS.
HOLDING CURRENT VS.
5 7 10
0 20 40
0
2 3 5 7 10
TYPICAL EXAMPLE
10
1
I
GT
60
(25°C) = 35µA
80 100 120 140
1
T
j
2 3 5 7 10
= 25°C
10
2
2
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
10
160
140
120
100
500
400
300
200
100
10
10
10
80
60
40
20
–1
0
0
10
7
5
3
2
7
5
3
2
7
5
3
2
10
RATE OF RISE OF OFF-STATE VOLTAGE
10
2
1
0
GATE TO CATHODE RESISTANCE (k )
–1
–1
TURN-ON TIME VS. GATE CURRENT
0
TYPICAL EXAMPLE
TYPICAL EXAMPLE
GATE TO CATHODE RESISTANCE
T
# 1
j
2 3
2 3
2 3
= 25°C
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
I
GT
HOLDING CURRENT VS.
25µA
GATE CURRENT (mA)
5 7 10
5 7 10
5 7 10
(25°C) I
1
0
0
# 1
2 3 5 7 10
2 3 5 7 10
2 3 5 7 10
H
0.9mA
(1k )
V
R
R
T
T
R
2
1
1
LOW POWER USE
a
j
D
GK
L
GK
= 125°C
2 3 5 7 10
2 3 5 7 10
2 3 5 7 10
= 25°C
= 47
= 100V
= 1k
= 1k
CR08AS
3
2
2
Feb.1999