PBSS4160V Philips Semiconductors, PBSS4160V Datasheet
PBSS4160V
Related parts for PBSS4160V
PBSS4160V Summary of contents
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... PBSS4160V NPN low V Rev. 02 — 31 January 2005 1. Product profile 1.1 General description Low V CEsat PNP complement: PBSS5160V. 1.2 Features Low collector-emitter saturation voltage V High collector current capability I High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 1 ...
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... Product data sheet Discrete pinning Description collector base emitter Ordering information Name Description - plastic surface mounted package; 6 leads Marking codes Rev. 02 — 31 January 2005 PBSS4160V NPN low V (BISS) transistor CEsat Simplified outline Symbol SOT666 ...
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... amb junction temperature ambient temperature storage temperature 0.6 P tot (W) (1) 0.4 (2) 0 collector mounting pad. Rev. 02 — 31 January 2005 PBSS4160V NPN low V (BISS) transistor CEsat Min Max - [1] - 0.9 [ 300 0. ...
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... Fig 2. Transient thermal impedance as a function of pulse time; typical values 9397 750 14359 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient Rev. 02 — 31 January 2005 PBSS4160V NPN low V (BISS) transistor CEsat Conditions Min Typ Max Unit [1] in free air - - [ collector mounting pad ...
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... mA 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 02 — 31 January 2005 PBSS4160V NPN low V CEsat Min Typ = ...
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... Fig 4. Base-emitter voltage as a function of collector mle135 V CEsat ( (mA) C (1) T (2) T (3) T Fig 6. Collector-emitter saturation voltage as a Rev. 02 — 31 January 2005 PBSS4160V NPN low V CEsat 1 (2) ( ...
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... Product data sheet mle129 V BEsat (V) (1) ( (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 02 — 31 January 2005 PBSS4160V NPN low V CEsat 1.2 (1) (2) 0.8 (3) 0 ...
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... Product data sheet mle131 (2) (1) R CEsat ( ) (7) (8) (9) (10 (V) CE (1) T (2) T (3) T Fig 10. Equivalent on-resistance as a function of Rev. 02 — 31 January 2005 PBSS4160V NPN low V CEsat (1) (2) ( ...
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... Product data sheet (probe) 450 mA Boff Rev. 02 — 31 January 2005 PBSS4160V NPN low V CEsat input pulse (idealized waveform) I (100%) Bon I Boff output pulse (idealized waveform off 006aaa003 V (probe) ...
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... 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA Rev. 02 — 31 January 2005 PBSS4160V NPN low V CEsat detail 0.1 0.1 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (BISS) transistor SOT666 ISSUE DATE 01-08-27 04-11-08 ...
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... For further information and the availability of packing methods, see 9397 750 14359 Product data sheet Description 4 mm pitch tape and reel Section Rev. 02 — 31 January 2005 PBSS4160V NPN low V CEsat [1] Packing quantity 4000 -115 14. © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... Test circuit for switching times added Packing information added Objective data sheet - Rev. 02 — 31 January 2005 PBSS4160V NPN low V CEsat Doc. number Supersedes 9397 750 14359 PBSS4160V_1 , t and t added s f off 9397 750 12884 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. (BISS) transistor ...
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... Rev. 02 — 31 January 2005 PBSS4160V NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Disclaimers Contact information . . . . . . . . . . . . . . . . . . . . 13 PBSS4160V NPN low V © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...