PBSS4160V Philips Semiconductors, PBSS4160V Datasheet - Page 8
PBSS4160V
Manufacturer Part Number
PBSS4160V
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS4160V.pdf
(14 pages)
Philips Semiconductors
9397 750 14359
Product data sheet
Fig 9. Collector current as a function of
(10) I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
(A)
1.6
1.2
0.8
0.4
I
C
2
0
T
collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
0
amb
= 60 mA
= 54 mA
= 48 mA
= 42 mA
= 36 mA
= 30 mA
= 24 mA
= 18 mA
= 12 mA
= 6 mA
= 25 C
1
(6)
(5)
2
(4)
(3)
3
(2)
(10)
(1)
(7)
(8)
(9)
4
V
CE
mle131
(V)
Rev. 02 — 31 January 2005
5
Fig 10. Equivalent on-resistance as a function of
R
(1) T
(2) T
(3) T
CEsat
( )
10
10
10
10
10
1
3
2
1
I
collector current; typical values
C
amb
amb
amb
/I
1
B
60 V, 1 A NPN low V
= 20
= 100 C
= 25 C
= 55 C
1
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
(2)
10
PBSS4160V
(1)
(3)
2
CEsat
10
(BISS) transistor
3
I
C
mle132
(mA)
10
4
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