VEC2801 Sanyo Semicon Device, VEC2801 Datasheet

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VEC2801

Manufacturer Part Number
VEC2801
Description
P-Channel Silicon MOSFET / Schottky Barrier Diode
Manufacturer
Sanyo Semicon Device
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VEC2801-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
www.DataSheet.co.kr
Ordering number : EN9078
VEC2801
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Marking : BL
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
[MOSFET]
[SBD]
The best suited for DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
Low ON-resistance.
1.8V drive.
Short reverse recovery time.
Low forward voltage.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
V RRM
V RSM
I O
I FSM
Tj
Tstg
Symbol
www.semiconductor-sanyo.com/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
Mounted on a ceramic board (900mm
50Hz sine wave, 1 cycle
VEC2801
Conditions
2
✕0.8mm) 1unit
DATA SHEET
61009PE MS IM TC-00001990
Ratings
--55 to +125
--55 to +125
--55 to +125
150
--12
--12
0.9
±8
15
15
--3
1
3
No.9078-1/6
Unit
°C
°C
°C
°C
W
V
V
A
A
V
V
A
A
Datasheet pdf - http://www.DataSheet4U.net/

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VEC2801 Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. VEC2801 SANYO Semiconductors MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...

Page 2

... Reverse Recovery Time Thermal Resistance Package Dimensions unit : mm (typ) 7012-004 0 0.65 2.9 VEC2801 Symbol Conditions V (BR)DSS --1mA DSS --12V GSS V GS =±6.4V (off -6V --1mA ⏐ yfs ⏐ --6V -1. (on --3A ...

Page 3

... --0. --1 --2 --3 Gate-to-Source Voltage VEC2801 t rr Test Circuit [SBD] Duty≤10 -- --1. =4Ω OUT VEC2801 S [MOSFET] --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT08898 [MOSFET] Ta=25 ° C --4 --5 --6 --7 --8 IT08943 50Ω 100Ω 10Ω 10μs -- ...

Page 4

... Drain Current --4 -- --3A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge 1.0 0.9 0.8 0.6 0.4 0 Ambient Temperature ° C VEC2801 fs⏐ [MOSFET --1.0 --10 IT03869 [MOSFET -- --4. (on --1.0 IT08903 [MOSFET IT08904 [MOSFET] 80 ...

Page 5

... Average Output Current FSM -- t 12 Current waveform 50Hz sine wave 0. 0.1 Time VEC2801 [SBD] 0.3 0.4 0.5 IT02957 [SBD] (3) (2) (4) (1) Sine wave 180° 360° 0.6 0.8 1.0 1.2 1.4 IT02959 [SBD 20ms 1.0 ...

Page 6

... Note on usage : Since the VEC2801 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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