VEC2812 Sanyo Semicon Device, VEC2812 Datasheet
VEC2812
Related parts for VEC2812
VEC2812 Summary of contents
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... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2812 SANYO Semiconductors MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...
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... Reverse Recovery Time Package Dimensions unit : mm (typ) 7012-004 0 0.65 2.9 VEC2812 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GSS = 8V = (off =10V =1mA yfs V DS =10V = (on =1A = (on ...
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... R DS (on 400 350 300 1.0A 250 I D =0.5A 200 150 100 Gate-to-Source Voltage VEC2812 t rr Test Circuit [SBD] Duty OUT 10 s VEC2812 [MOSFET] 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT02901 Ta= IT02985 50 100 =10V 1 ...
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... V DS =10V =1. Total Gate Charge 1.0 0.8 0.6 0.4 0 Ambient Temperature VEC2812 [MOSFET =10V 0.1 1.0 IT02905 [MOSFET 1.0 IT02907 [MOSFET IT07692 [MOSFET] 80 100 120 140 ...
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... Average Output Current 100 0.1 1.0 Reverse Voltage VEC2812 [SBD] 0.3 0.4 0.5 IT07944 [SBD] (1) (1) (2) (4) (3) (2) (4) (3) Rectangular wave 360 Sine wave 180 360 0.6 0.8 1.0 1.2 IT08214 [SBD] f=1MHz ...
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... Note on usage : Since the VEC2812 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...