QSZ1 Rohm, QSZ1 Datasheet - Page 4

• Manufacturer Part Number: QSZ1
• Description: General purpose transistor
• Manufacturer: Rohm

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Transistors
Tr2
0.001
1000
0.01
100
0.1
Fig.11 Grounded emitter propagation
10
10
0.001
1
1000
0
100
10
BASE TO EMITTER CURRENT : V
0.1
1
Fig.14 Collector output capacitance
EMITTER TO BASE VOLTAGE : V
COLLECTOR TO BASE VOLTAGE : V
Ta=25°C
COLLECTOR CURRENT : I
Fig.8 DC current gain
Ta=100°C
characteristics
0.01
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Ta=100°C
0.5
Ta= −40°C
vs. collector current
1
0.1
Ta=−40°C
Cib
Ta=25°C
1
Cob
10
1
V
Pulsed
C
CE
(A)
V
Pulsed
=2V
CE
BE
Ta = 25˚C
I
f = 1MHz
C
=2V
= 0A
(V)
EB
( V)
CB
1.5
10
( V)
100
0.001
0.01
1000
0.1
100
0.001
10
0.001
1
Fig.9 Base-emitter saturation voltage
I
V
Pulsed
C
Fig.12 Gain bandwidth product
CE
/I
B
=2V
=20/1
COLLECTOR CURRENT : I
vs. collector current
EMITTER CURRENT : I
0.01
0.01
vs. emitter current
Ta=100°C
0.1
0.1
Ta= −40°C
1
E
1
Ta=25°C
V
f=100MHz
Ta=25°C
(A)
CE
C
(A)
=2V
10
10
0.001
0.01
Fig.10 Collector-emitter saturation voltage
0.1
0.001
1000
1
100
10
0.01
1
I
C
/I
I
B
Ta=25°C
Pulsed
C
=20/1
/I
B
vs. collector current
COLLECTOR CURRENT : I
=50/1
COLLECTOR CURRENT : I
0.01
Fig.13 Switching time
I
C
0.1
/I
B
=10/1
0.1
1
1
QSZ1
C
Ta=25°C
V
f=100MHz
(A)
C
CE
tstg
tdon
tf
tr
(A)
=5V
10
4/4
10