BCP52M Siemens Semiconductor Group, BCP52M Datasheet - Page 2
BCP52M
Manufacturer Part Number
BCP52M
Description
PNP Silicon AF Transistor (For AF driver and output stages High collector current)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BCP52M.pdf
(4 pages)
Semiconductor Group
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain 1)
I
DC current gain 1)
I
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Base-emitter voltage 1)
I
AC Characteristics
Transition frequency
I
1) Pulse test: t 300 s, D = 2%
Semiconductor Group
C
C
E
C
C
C
C
C
C
CB
CB
= 10 mA, I
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 50 mA, V
= 30 V, I
= 30 V, I
C
CE
B
E
E
B
CE
= 0
B
= 0
= 0
= 0 , T
CE
CE
CE
= 0
= 2 V
= 50 mA
= 10 V, f = 100 MHz
= 2 V
= 2 V
= 2 V
A
= 150 °C
A
= 25°C, unless otherwise specified.
BCP 51M
BCP 52M
BCP 53M
BCP 51M
BCP 52M
BCP 53M
2
2
Symbol
V
V
V
I
I
h
h
h
V
V
f
CBO
CBO
T
FE
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
45
60
80
45
60
25
40
25
5
-
-
-
-
-
BCP 51M ... BCP 53M
Values
typ.
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
100
250
0.5
Au -11-1998
20
-
-
-
-
1
-
-
-
-
-
-
1998-11-01
Unit
V
nA
µA
-
V
MHz