UNR121x Panasonic Semiconductor, UNR121x Datasheet - Page 2

• Manufacturer Part Number: UNR121x
• Description: Silicon NPN epitaxial planar type
• Manufacturer: Panasonic Semiconductor

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UNR121x Series
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current UNR1212/1214/121D/121E
(Collector open) UNR1213
Forward current UNR1211
transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance UNR1211/1214/1215/121K
Resistance ratio UNR1211/1212/1213/121L R
2. * : Rank classification (UNR1110/1115/1116/1117)
Parameter
Rank
UNR1211
UNR1210/1215/1216/1217
UNR121F/121K
UNR1219
UNR1218/121L
UNR1212/121E
UNR1213/1214
UNR1210
1217
UNR1219/121D/121F
UNR1218/121K/121L
UNR1213/121K
UNR121D
UNR121E
UNR1212/1217
UNR1210/1213/121D/121E
UNR1216/121F/121L
UNR1218
UNR1219
UNR1214
UNR1218/1219
UNR121D
UNR121E
UNR121F
UNR121K
h
FE
*
*
/1215
160 to 260
*
/1216
Q
*
/
a
= 25°C ± 3°C
Symbol
V
V
V
I
I
I
V
V
CE(sat)
h
CBO
CEO
EBO
R
210 to 340
1
f
CBO
CEO
FE
OH
/R
OL
T
1
2
R
I
I
V
V
V
V
I
V
V
V
V
V
V
C
C
C
CB
CE
EB
CE
CC
CC
CC
CC
CC
CB
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00003BED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 10 V, I
290 to 460
S
B
C
E
Conditions
B
B
B
B
B
C
B
E
B
E
= 0
= 0
= 0
= 0.5 V, R
= 2.5 V, R
= 3.5 V, R
= 10 V, R
= 6 V, R
= 0
= 0
= 5 mA
= 0.3 mA
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
0.17
0.08
Min
160
4.9
0.8
50
50
35
60
80
30
20
0.51
0.21
2.14
0.47
2.13
Typ
4.7
1.0
0.1
4.7
80
10
22
47
1
+30%
Max
0.01
0.25
0.25
0.12
460
0.1
0.5
0.2
0.1
1.0
1.5
2.0
0.2
1.2
0.5
MHz
Unit
mA
µA
µA
kΩ


V
V
V
V
V