UNR2225 Panasonic Semiconductor, UNR2225 Datasheet - Page 2

• Manufacturer Part Number: UNR2225
• Description: Silicon NPN epitaxial planar type
• Manufacturer: Panasonic Semiconductor

UNR2225/2226/2227
■ Electrical Characteristics (continued) T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Resistance ratio
Transition frequency
Common characteristics chart
Characteristics charts of UNR2225
250
200
150
100
400
300
200
100
50
0
0
2. * : Refer to R
0
0
Collector-emitter voltage V
Ambient temperature T
2.5
40
Parameter
I
P
C
T
UNR2226
UNR2227
UNR2225
 V
V
 T
5.0
on
I
80
measurment circuit
CE
a
R
I
120
T
1
B
7.5
a
a
=
= 25°C
( °C )
CE
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
R
2
(V)
10.0
160
V
Symbol
B
R
f
V
on
T
R
1 000
V
L
100
10
1
1
V
V
V
A
25°C
I
CB
a
Collector current I
= 7 V, R
SJH00040CED
= 25°C ± 3°C
= 10 V, I
f = 1 kHz
V = 0.3 V
V
CE(sat)
R
T
a
on
L
= 75°C
= 1 kΩ, f = 1 kHz
Conditions
E
10
=
= −50 mA, f = 200 MHz
 I
V
V
−25°C
A
C
C
B
−V
I
(mA)
C
/ I
B
B
× R
= 10
L
100
(Ω)
250
200
150
100
50
0
Min
1
Collector current I
−25°C
25°C
T
10
a
0.95
Typ
200
= 75°C
1.1
1.5
h
FE
10
 I
Max
2
C
C
V
10
(mA)
CE
3
MHz
= 10 V
Unit
Ω
10
4