UNR32AE Panasonic Semiconductor, UNR32AE Datasheet - Page 2

• Manufacturer Part Number: UNR32AE
• Description: Silicon NPN epitaxial planar type
• Manufacturer: Panasonic Semiconductor

UNR32AE
2
120
300
200
100
10
80
40
10
10
1
0
0
0
−1
−1
V
CE
Ambient temperature T
Collector current I
= 10 V
Output current I
1
UNR32AE_V
UNR32AE_h
UNR32AE_P
40
1
25°C
V
h
h
h  I
P
FE
FE
IN
T
 T
 T

10
 I

 I
 I

−25°C
80
T
T
T
a
a
a
a
a
C
C
C
O
FE
O
IN
T
= 85°C
10
C
-T
-I
-I
V
T
(m A )
10
C
a
( mA )
O
a
O
a
= 25°C
2
= 0.2 V
( °C )
120
10
10
3
2
0.12
0.08
0.04
10
0
1
Collector-emitter voltage V
0
0
Collector-base voltage V
T
a
= 25°C
SJH00106AED
10
UNR32AE_C
UNR32AE_I
4
C
C
I
I
C
ob
 V
 V

 V
 V

20
CE
CE
CE
C
CB
ob
-V
8
-V
I
f = 1 MHz
T
CE
B
30
CB
a
= 500 µA
CE
CB
= 25°C
400 µA
300 µA
200 µA
100 µA
( V )
( V )
40
12
10
10
10
10
10
−1
−2
−1
10
1
1
2
0
−1
Collector current I
Input voltage V
UNR32AE_V
25°C
UNR32AE_I
V
V
1
4
CE(sat)
I
O
 V
 V

T
a
= 85°C
 I
 I

CE(sat)
IN
O
IN
10
-V
C
8
C
−25°C
I
C
IN
(m A )
V
T
(V)
-I
/ I
a
O
C
= 25°C
B
= 5 V
= 30
10
12
2