Transistors with built-in Resistor
UNR32AN
Silicon NPN epitaxial planar transistor
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
I
T
V
V
CBO
CEO
a
I
I
I
V
V
C
stg
1
CE(sat)
T
h
CBO
CEO
EBO
R
j
f
CBO
CEO
= 25°C
FE
OH
/ R
OL
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00080AED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
B
B
Unit
mW
B
C
B
E
E
mA
= 0
= 0
°C
°C
V
V
= 0
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 5 mA
= 0.3 mA
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: KL
Internal Connection
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
(47 kΩ)
−30%
3
0.80
1.20
1
B
0.08
Min
4.9
R
50
50
80
R
1
(0.40)
±0.05
±0.05
2
(4.7 kΩ)
2
Typ
150
4.7
0.1
SSSMini3-F1 Package
+30%
Max
0.25
0.12
400
0.1
0.5
0.2
0.2
0.10
C
E
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1