UNR521W Panasonic Semiconductor, UNR521W Datasheet
UNR521W
Manufacturer Part Number
UNR521W
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.UNR521W.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UNR521WGOL
Manufacturer:
Panasonic
Quantity:
5 289
www.DataSheet4U.com
Transistors with built-in Resistor
UNR521W
Silicon NPN epitaxial planar type
For digital circuits
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Electrical Characteristics
Electrical Characteristics
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2004
Costs can be reduced through downsizing of the equipment and reduction of
Costs can be reduced through downsizing of the equipment and reduction of
SMini type package allowing easy automatic insertion through tape packing
SMini type package allowing easy automatic insertion through tape packing
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
the number of parts
Parameter
Parameter
T
a
a
a
= 25
= 25
T
a
a
a
= 25
= 25
°C±3°C
Symbol
V
V
T
T
T
°C
P
I
T
T
T
CBO
CEO
Symbol
stg
stg
C
V
T
j
j
V
V
I
I
I
h
h
h
CE(sat)
CBO
CEO
EBO
R
R
R
f
f
f
CBO
CEO
FE
FE
T
T
2
2
–55 to +150
Rating
I
I
V
V
V
V
I
V
C
C
C
C
C
C
C
C
C
100
150
150
CB
CE
CE
CE
EB
CE
CE
CE
CB
50
50
= 10
= 10
= 2 mA, I
= 2 mA, I
= 10 mA, I
= 10 mA, I
= 50 V, I
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 10 V, I
SJH00111AED
µA, I
C
C
C
B
E
E
E
B
C
C
C
E
E
E
E
E
E
B
= 0
= 0
= 0
Unit
mW
Conditions
= 0
= 0
mA
= 0
= 0
= 0
= 5 mA
= 5 mA
= —2 mA, f = 200 MHz
= —2 mA, f = 200 MHz
°C
°C
= 0.3 mA
V
V
Marking Symbol: 9F
Internal Connection
1: Base
2: Emitter
3: Collecter
10°
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
—30%
1.3
2.0
Min
50
50
80
B
±0.1
±0.2
R
(100 kΩ)
2
2
Typ
100
100
SMini3-G1 Package
+30%
Max
0.25
100
0.1
0.5
0.15
C
E
+0.10
–0.05
Unit: mm
MHz
Unit
kΩ
kΩ
k
µA
µA
µA
V
V
V
1
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UNR521W Summary of contents
Page 1
... Transistors with built-in Resistor UNR521W Silicon NPN epitaxial planar type For digital circuits Features Features Costs can be reduced through downsizing of the equipment and reduction of Costs can be reduced through downsizing of the equipment and reduction of the number of parts ...
Page 2
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...