12A01SP Sanyo Semicon Device, 12A01SP Datasheet
12A01SP
Manufacturer Part Number
12A01SP
Description
Low-Frequency General-Purpose Amplifier Applications
Manufacturer
Sanyo Semicon Device
Datasheet
1.12A01SP.pdf
(5 pages)
www.DataSheet4U.com
Ordering number : ENN7480
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : XP
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
•
•
•
•
Low-frequency Amplifier, small motor drive,
muting circuit.
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
R CE (sat) typ.=0.57 [I C =0.5A, I B =25mA].
Small ON-resistance (Ron).
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
I CP
P C
I C
Tj
f T
General-Purpose Amplifier Applications
V CB =--12V, I E =0
V EB =- -4V, I C =0
V CE =--2V, I C =--10mA
V CE =--2V, I C =--50mA
12A01SP
Conditions
Package Dimensions
unit : mm
2033A
Conditions
0.4
0.5
0.4
PNP Epitaxial Planar Silicon Transistor
1.3
1
3.8nom
4.0
2
3.0
3
[12A01SP]
1.3
min
Low-Frequency
300
O2203 TS IM TA-100570
Ratings
typ
Ratings
490
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
12A01SP
2.2
Continued on next page.
--55 to +150
0.4
max
--500
--1.0
--0.1
--0.1
400
150
700
--15
--12
--5
No.7480-1/4
MHz
Unit
mW
Unit
mA
V
V
V
A
C
C
A
A
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12A01SP Summary of contents
Page 1
... Tstg Symbol Conditions I CBO V CB =--12V EBO -4V =--2V =--10mA =--2V =--50mA PNP Epitaxial Planar Silicon Transistor 12A01SP Low-Frequency [12A01SP] 2.2 4.0 0 1.3 1 Emitter 2 : Collector 3 : Base 3.0 3.8nom SANYO : SPA Ratings --15 --12 ...
Page 2
... Collector Current 12A01SP Symbol Conditions Cob V CB =--10V, f=1MHz V CE (sat -200mA -10mA V BE (sat -200mA -10mA V (BR)CBO - (BR)CEO -1mA (BR)EBO I E =-- See specified Test Circuit ...
Page 3
... Collector-to-Base Voltage Ron -- f=1MHz 1 0 --0.1 --1.0 Base Current 12A01SP -- = --1 --0 --1000 --1.0 IT05205 1000 f=1MHz 100 --10 --1.0 ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. 12A01SP PS No.7480-4/4 ...
Page 5
...