P2103NV Niko, P2103NV Datasheet

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P2103NV

Manufacturer Part Number
P2103NV
Description
N- & P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Niko
Datasheet

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P2103NVG
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www.DataSheet4U.com
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE RATINGS
1
2
ELECTRICAL CHARACTERISTICS (T
PRODUCT SUMMARY
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
Junction & Storage Temperature Range
Lead Temperature (
Continuous Drain Current
Power Dissipation
Junction-to-Ambient
N-Channel
P-Channel
THERMAL RESISTANCE
PARAMETER
PARAMETERS/TEST CONDITIONS
V
(BR)DSS
-30
30
1
/
1
16
” from case for 10 sec.)
R
21mΩ
35mΩ
DS(ON)
N- & P-Channel Enhancement Mode
-6A
C
7A
I
SYMBOL
D
= 25 °C Unless Otherwise Noted)
C
V
Field Effect Transistor
V
= 25 °C, Unless Otherwise Noted)
(BR)DSS
GS(th)
T
T
T
T
C
C
C
C
SYMBOL
= 25 °C
= 70 °C
= 25 °C
= 70 °C
R
θJA
STATIC
V
V
V
V
DS
GS
DS
GS
= V
TEST CONDITIONS
= V
= 0V, I
= 0V, I
1
GS
GS
, I
, I
TYPICAL
D
D
D
D
SYMBOL
= -250µA
= 250µA
= -250µA
= 250µA
T
V
V
j
I
, T
P
T
I
DM
GS
DS
D
D
L
stg
N-Channel P-Channel UNITS
N-Ch
P-Ch
N-Ch
P-Ch
MAXIMUM
±20
30
28
7
6
62.5
-55 to 150
275
MIN
1.3
-0.8
-30
0.8
30
2
LIMITS
±20
-30
-24
TYP MAX
P2103NV
-1.5
-6
-5
1.5
G : GATE
D : DRAIN
S : SOURCE
OCT-22-2003
UNITS
°C / W
-2.5
2.5
SOP-8
°C
W
V
V
A
UNIT
V

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P2103NV Summary of contents

Page 1

... 1 -55 to 150 j stg T 275 L TYPICAL MAXIMUM 62.5 LIMITS MIN = 250µA N- P-Ch -30 = -250µ 250µA N-Ch 0 P-Ch -0 -250µ P2103NV SOP GATE D : DRAIN S : SOURCE -30 V ± -24 W °C UNITS ° UNIT TYP MAX V 1.5 2.5 -1.5 -2.5 OCT-22-2003 ...

Page 2

... I DS DYNAMIC C iss N-Channel oss P-Channel rss N-Channel 0.5V DS (BR)DSS P-Channel V = 0.5V DS (BR)DSS P2103NV = ±20V N-Ch GS P-Ch = ±20V N- °C N- P- ° N- 10V GS P-Ch -24 = -10V N-Ch D P- ...

Page 3

... Reverse Recovery Charge 1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2103NV”, DATE CODE or LOT # N- & P-Channel Enhancement Mode Field Effect Transistor N-Channel t d(on) V ...

Page 4

... NIKO-SEM N-CHANNEL www.DataSheet4U.com N- & P-Channel Enhancement Mode Field Effect Transistor 4 P2103NV SOP-8 OCT-22-2003 ...

Page 5

... NIKO-SEM www.DataSheet4U.com N- & P-Channel Enhancement Mode Field Effect Transistor 5 P2103NV SOP-8 OCT-22-2003 ...

Page 6

... NIKO-SEM P-CHANNEL www.DataSheet4U.com N- & P-Channel Enhancement Mode Field Effect Transistor 6 P2103NV SOP-8 OCT-22-2003 ...

Page 7

... NIKO-SEM www.DataSheet4U.com N- & P-Channel Enhancement Mode Field Effect Transistor 7 P2103NV SOP-8 OCT-22-2003 ...

Page 8

... NIKO-SEM Dimension Min. www.DataSheet4U.com A 4.8 B 3.8 C 5 1.35 G 0.1 N- & P-Channel Enhancement Mode Field Effect Transistor SOIC-8 (D) MECHANICAL DATA mm Dimension Typ. Max. 4.9 5.0 H 3.9 4.0 I 6.0 6.2 J 0.445 0.51 K 1.27 L 1.55 1.75 M 0.175 0. P2103NV SOP-8 mm Min. Typ. Max. 0.5 0.715 0.83 0.18 0.254 0.25 0.22 0° 4° 8° OCT-22-2003 ...

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