P2103NV Niko, P2103NV Datasheet - Page 3

• Manufacturer Part Number: P2103NV
• Description: N- & P-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: Niko

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NIKO-SEM
1
2
3
REMARK: THE PRODUCT MARKED WITH “P2103NV”, DATE CODE or LOT #
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
2
2
3
1
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
2
2
N- & P-Channel Enhancement Mode
Field Effect Transistor
t
t
V
d(on)
d(off)
I
Q
I
SM
t
t
t
SD
S
rr
r
f
rr
I
D
I
D
≅ -1A, V
I
≅ 1A, V
I
F
F
= -5A, dl
= 5A, dl
V
DS
I
I
F
F
= -1A, V
= 1A, V
= -15V, R
GS
GS
N-Channel
P-Channel
V
3
DS
F
= 10V, R
= -10V, R
F
/dt = 100A / µS
/dt = 100A / µS
= 15V
GS
GS
L
= 0V
= 0V
= 1Ω
GEN
GEN
= 6Ω
= 6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
C
= 25 °C)
15.5
15.5
P2103NV
120
160
7.9
7.9
20
20
10
17
35
75
OCT-22-2003
-3
-6
-1
3
6
1
SOP-8
nS
nS
nC
A
V