MBM29DL164BD Fujitsu Media Devices, MBM29DL164BD Datasheet

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MBM29DL164BD

Manufacturer Part Number
MBM29DL164BD
Description
(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
Manufacturer
Fujitsu Media Devices
Datasheet

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MBM29DL164BD-90PFTN
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FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
16M (2M 8/1M 16) BIT
MBM29DL16XTD/BD
Ordering Part No.
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
FEATURES
• 0.33 m Process Technology
• Simultaneous Read/Write operations (dual bank)
• Single 3.0 V read, program, and erase
PRODUCT LINE UP
PACKAGES
DATA SHEET
Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”
in GENERAL DESCRIPTION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Minimizes system level power requirements
48-pin plastic TSOP (1)
(FPT-48P-M19)
Marking Side
Part No.
V
V
CC
CC
= 3.3 V
= 3.0 V
+0.3 V
–0.3 V
+0.6 V
–0.3 V
48-pin plastic TSOP (1)
Marking Side
(FPT-48P-M20)
-70/90
MBM29DL16XTD/MBM29DL16XBD
70
70
70
30
Dual Operation
48-ball plastic FBGA
(BGA-48P-M13)
DS05-20874-7E
90
90
90
35
(Continued)

Related parts for MBM29DL164BD

MBM29DL164BD Summary of contents

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M 8/1M 16) BIT MBM29DL16XTD/BD FEATURES • 0.33 m Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” ...

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MBM29DL16XTD/BD (Continued) • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum ...

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GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(1) and 48-ball FBGA Package. These devices ...

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MBM29DL16XTD/BD MBM29DL16XTD/BD Device Bank Divisions Table Device Organization Part Number MBM29DL161TD/BD MBM29DL162TD/ MBM29DL163TD/BD MBM29DL164TD/BD 4 -70/90 Bank 1 Megabits Sector Sizes 0.5 Mbit Eight 8K byte/4K word Eight 8K byte/4K word, 2 Mbit three 64K byte/32K word Eight ...

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PIN ASSIGNMENTS N. RESET 12 N.C. 13 WP/ACC 14 RY/BY ...

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MBM29DL16XTD/BD (Continued ...

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BLOCK DIAGRAM Bank 2 Address RESET State WE Control CE & OE Command BYTE Register WP/ACC Bank 1 Address LOGIC SYMBOL MBM29DL16XTD/BD Cell ...

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MBM29DL16XTD/BD DEVICE BUS OPERATION MBM29DL16XTD/BD User Bus Operations Table (BYTE = V Operation 1 Auto-Select Manufacturer Code* Auto-Select Device Code* 1 Read* 3 Standby Output Disable Write (Program/Erase) 2, Enable Sector Group Protection* Verify Sector Group Protection Temporary ...

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MBM29DL16XTD/BD Command Definitions Table First Bus Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word 1 XXXh F0h Read/Reset* 1 Byte Word 555h 3 AAh Read/Reset* 1 AAAh ...

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MBM29DL16XTD/ The valid addresses are This command is valid during HiddenROM mode The data “00h” is also acceptable The fourth bus cycle is only for read. Notes: Address ...

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MBM29DL161TD/BD Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code Byte MBM29DL161TD Word Device Code Byte MBM29DL161BD Word Sector Group Sector Group Protection * for Byte mode. At Byte mode Outputs 01h ...

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MBM29DL16XTD/BD MBM29DL162TD/BD Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code Byte MBM29DL162TD Word Device Code Byte MBM29DL162BD Word Sector Group Protection * for Byte mode. At Byte mode Outputs 01h at ...

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MBM29DL163TD/BD Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code Byte MBM29DL163TD Word Device Code Byte MBM29DL163BD Word Sector Group Sector Group Protection * for Byte mode. At Byte mode Outputs 01h ...

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... Autoselect mode is read out at command mode, because then it enables to activate simultaneous operation. Type Code Manufacturer’s Code (B)* MBM29DL164TD (W) 2233h 0 Device Code (B)* MBM29DL164BD (W) 2235h 0 Sector Group Protection * : At Byte mode are High-Z and (B) : Byte mode (W) : Word mode HI-Z : High-Z ...

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FLEXIBLE SECTOR-ERASE ARCHITECTURE Sector Address Table (MBM29DL161TD) Sector Address Bank Sector Bank Address SA0 SA1 SA2 SA3 0 0 ...

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MBM29DL16XTD/BD Sector Address Bank Sector Bank Address SA38 SA37 SA36 SA35 SA34 SA33 ...

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Sector Address Table (MBM29DL162TD) Sector Address Bank Bank Sector Address SA0 SA1 SA2 SA3 SA4 ...

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MBM29DL16XTD/BD Sector Address Bank Bank Sector Address SA38 SA37 SA36 SA35 SA34 SA33 ...

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Sector Address Table (MBM29DL163TD) Sector Address Bank Sector SA0 SA1 SA2 SA3 SA4 0 ...

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MBM29DL16XTD/BD Sector Address Bank Sector SA38 SA37 SA36 SA35 SA34 SA33 1 ...

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Sector Address Table (MBM29DL164TD) Sector Address Bank Sector SA0 SA1 SA2 SA3 SA4 0 ...

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... SA2 SA1 SA0 BA: Bank Address Note: The address range The address range -70/90 Sector Address Table (MBM29DL164BD) Sector Size (Kbytes/ Address Range Kwords 64/32 1F0000h to 1FFFFFh ...

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Sector Group Address Table (MBM29DL16XTD) Sector Group SGA0 SGA1 SGA2 0 0 SGA3 0 1 SGA4 0 1 SGA5 1 0 SGA6 1 0 SGA7 ...

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MBM29DL16XTD/BD Sector Group Address Table (MBM29DL16XBD) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 SGA8 0 ...

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... Not Supported 0000h 1Fh = MBM29DL161TD 1Ch = MBM29DL162TD 000Ah 18h = MBM29DL163TD 10h = MBM29DL164TD 1Fh = MBM29DL161BD 0000h 1Ch = MBM29DL162BD 18h = MBM29DL163BD 0005h 10h = MBM29DL164BD Burst Mode Type 0000h 00h = Not Supported Page Mode Type 0004h 00h = Not Supported ACC (Acceleration) Supply 0000h Minimum ...

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MBM29DL16XTD/BD FUNCTIONAL DESCRIPTION Simultaneous Operation MBM29DL16XTD/BD have feature, which is capability of reading data from one bank of memory while a program or erase operation is in progress in the other bank of memory (simultaneous operation), in addition to the ...

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... MBM29DL162TD = 222Dh and MBM29DL162BD = 222Eh for 16 mode), (MBM29DL163TD = 28h and MBM29DL163BD = 2Bh for 8 mode; MBM29DL163TD = 2228h and MBM29DL163BD = 222Bh for 16 mode), (MBM29DL164TD = 33h and MBM29DL164BD = 35h for 8 mode; MBM29DL164TD = 2233h and MBM29DL164BD = 2235h for 16 mode). These two bytes/words are given in “MBM29DL161TD/BD, MBM29DL162TD/BD, MBM29DL163TD/BD and MBM29DL164TD/BD Sector Group Protection Verify Autoselect Codes Tables” ...

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MBM29DL16XTD/BD Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does ...

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RESET Hardware Reset The MBM29DL16XTD/BD devices may be reset by driving the RESET pin to V requirement and has to be kept low (V Any operation in the process of being executed will be terminated and the internal state machine ...

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... MBM29DL162BD = 222Eh for 16 mode), (MBM29DL163TD = 28h and MBM29DL163BD = 2Bh for 8 mode; MBM29DL163TD = 2228h and MBM29DL163BD = 222Bh for 16 mode), (MBM29DL164TD = 33h and MBM29DL164BD = 35h for 8 mode; MBM29DL164TD = 2233h and MBM29DL164BD = 2235h for 16 mode). (See “MBM29DL161TD/BD, MBM29DL162TD/BD, MBM29DL163TD/BD and MBM29DL164TD/BD Sector Group Protection Verify Autoselect Codes Tables” and these “Extended Autoselect Code Tables” in DEVICE BUS OPERATION ...

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If the software (program code) for Autoselect command is stored into the Flash memory, the device and manufacture codes should be read from the other bank where is not contain the software. To terminate the operation necessary to ...

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MBM29DL16XTD/BD Sector Erase Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector ...

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When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading data in this mode is the same as reading from the standard read mode except that the data must be read from sectors that have ...

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MBM29DL16XTD/BD actual data of memory cell be read from the another bank. Following the command write, a read cycle from specific address retrives device information. Please note that output data of upper byte (DQ in word mode (16 bit) read. ...

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HiddenROM Protect Command There are two methods to protect the HiddenROM area. One is to write the sector group protect setup command(60h), set the sector address in the HiddenROM area and (A group protect command(60h) during the HiddenROM mode. The ...

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MBM29DL16XTD/BD Status Embedded Program Algorithm Embedded Erase Algorithm Erase Suspend Read (Erase Suspended Sector) Erase Erase Suspend Read Suspended (Non-Erase Suspended Sector) In Progress Mode Erase Suspend Program (Non-Erase Suspended Sector) Program Suspend Read Program (Program Suspended Sector) Suspended Program ...

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The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm or sector erase time-out. (See “Hardware Sequence Flags Table”.) See “(6) AC Waveforms for Data Polling during Embedded Algorithm Operations” in TIMING DIAGRAM for the ...

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MBM29DL16XTD/ Sector Erase Timer After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial ...

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In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. (Refer to “(4) Toggle Bit Algorithm” in “ FLOW CHART”.) Mode Program Erase Erase-Suspend Read (Erase-Suspended ...

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MBM29DL16XTD/BD Low V Write Inhibit CC To avoid initiation of a write cycle during V than < the command register is disabled and all internal program/erase circuits are disabled. LKO CC LKO Under this ...

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ABSOLUTE MAXIMUM RATINGS (See WARNING) Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with respect to Ground All pins except A , OE, RESET * Power Supply Voltage OE, and RESET* 1, ...

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MBM29DL16XTD/BD MAXIMUM OVERSHOOT/MAXIMUM UNDERSOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 Note: This waveform is applied for A 42 -70/ ...

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DC CHARACTERISTICS Parameter Symbol Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current WP/ACC Accelerated Program Current V Active Current Active Current Current (Standby Current (Standby, Reset) ...

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MBM29DL16XTD/BD AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From ...

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Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time Data Hold ...

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MBM29DL16XTD/BD (Continued) Parameter RESET High Level Period before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time *1 ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle 100,000 PIN CAPACITANCE Parameter Input Capacitance C Output Capacitance C Control Pin Capacitance C WP/ACC Pin Capacitance C Notes : Test ...

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MBM29DL16XTD/BD TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 48 -70/90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from ...

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AC Waveforms for Hardware Reset/Read Operations Address RESET High-Z Outputs MBM29DL16XTD/ Address Stable t ACC Output Valid -70/ ...

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MBM29DL16XTD/BD (3) AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL A0h Data Notes address of the memory location to be ...

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AC Waveforms for Alternate CE Controlled Program Operations Address Data Notes address of the memory location to be programmed data to be programmed at byte address the ...

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MBM29DL16XTD/BD (5) AC Waveforms for Chip/Sector Erase Operations Address GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase. Note: These waveforms ...

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AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). ...

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MBM29DL16XTD/BD (7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). ...

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Bank-to-bank Read/Write Timing Diagram Read t RC Address BA1 GHWL WE Valid DQ Output Note: This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address corresponding to ...

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MBM29DL16XTD/BD (10) RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (11) RESET, RY/BY Timing Diagram WE RESET RY/BY 56 -70/90 Rising edge of the last write pulse Entire programming or erase operations t BUSY ...

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Timing Diagram for Word Mode Configuration CE BYTE ELFH (13) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL ...

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MBM29DL16XTD/BD (15) AC Waveforms for Sector Group Protection SPAX ...

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Temporary Sector Group Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY MBM29DL16XTD/BD t Program or Erase Command Sequence VLHT Unprotection period -70/90 t VLHT t VLHT 59 ...

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MBM29DL16XTD/BD (17) Extended Sector Group Protection Timing Diagram VCS t RESET VLHT t VIDR Add Data SPAX : Sector Group Address to be protected SPAY : Next Sector ...

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Accelerated Program Timing Diagram VACCR t VCS V ACC V IH WP/ACC CE WE RY/BY MBM29DL16XTD/BD t Program Command Sequence VLHT Acceleration period -70/90 t VLHT t VLHT 61 ...

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MBM29DL16XTD/BD FLOW CHART (1) Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes: The sequence is applied for The addresses differ from 62 -70/90 Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last ...

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Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Notes: The sequence is applied for The addresses differ from MBM29DL16XTD/BD Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase ...

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MBM29DL16XTD/BD (3) Data Polling Algorithm * : DQ is rechecked even -70/90 Start Read Byte ( Address for programming 7 0 Addr Any of the sector addresses within Yes ...

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Toggle Bit Algorithm *1: Read toggle bit twice to determine whether it is toggling. *2: Recheck toggle bit because it may stop toggling as DQ MBM29DL16XTD/BD Start Read Addr Read DQ to ...

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MBM29DL16XTD/BD (5) Sector Group Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode -70/90 Start Setup Sector Group Addr ...

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Temporary Sector Group Unprotection Algorithm *1: All protected sector groups are unprotected. *2: All previously protected sector groups are protected once again. MBM29DL16XTD/BD Start RESET = Perform Erase or Program Operations RESET = V IH Temporary ...

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MBM29DL16XTD/BD (7) Extended Sector Group Protection Algorithm Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed 68 -70/90 Start RESET = V ID ...

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Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from MBM29DL16XTD/BD Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No ...

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... MBM29DL164BD-70PFTN MBM29DL164BD-90PFTN MBM29DL161BD-70PFTR MBM29DL161BD-90PFTR MBM29DL162BD-70PFTR MBM29DL162BD-90PFTR MBM29DL163BD-70PFTR MBM29DL163BD-90PFTR MBM29DL164BD-70PFTR MBM29DL164BD-90PFTR MBM29DL161BD-70PBT MBM29DL161BD-90PBT MBM29DL162BD-70PBT MBM29DL162BD-90PBT MBM29DL163BD-70PBT MBM29DL163BD-90PBT MBM29DL164BD-70PBT MBM29DL164BD-90PBT 70 -70/90 Package Access Time 48-pin plastic TSOP (1) (FPT-48P-M19) Normal Bend 48-pin plastic TSOP (1) (FPT-48P-M20) Reverse Bend 48-pin plastic FBGA (BGA-48P-M13) 48-pin plastic TSOP (1) (FPT-48P-M19) ...

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MBM29DL16X T E DEVICE NUMBER/DESCRIPTION MBM29DL16X 16Mega-bit (2M 3.0 V-only Read, Program, and Erase MBM29DL16XTD/BD 70 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Normal Bend PFTR = 48-Pin Thin Small Outline Package (TSOP) Reverse Bend ...

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MBM29DL16XTD/BD PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 2003 FUJITSU LIMITED F48029S-c-6-7 C 48-pin plastic TSOP(1) (FPT-48P-M20) LEAD No. 1 INDEX 24 "A" * 2003 FUJITSU LIMITED F48030S-c-6 ...

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FBGA (BGA-48P-M13) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48013S-c-3-2 C MBM29DL16XTD/BD +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 8.00±0.20 4.00(.157) (.315±.008 (48-ø.018±.004) Dimensions in mm (inches). Note: The values in ...

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MBM29DL16XTD/BD FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in ...

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