MBM29DL16xBE Fujitsu Media Devices, MBM29DL16xBE Datasheet
MBM29DL16xBE
Related parts for MBM29DL16xBE
MBM29DL16xBE Summary of contents
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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M 8/1M 16) BIT MBM29DL16XTE/BE FEATURES • 0.23 m Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program ...
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MBM29DL16XTE/BE (Continued) • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum ...
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GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices ...
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MBM29DL16XTE/BE Table 1 Device Organization Part Number MBM29DL161TE/BE MBM29DL162TE/ MBM29DL163TE/BE MBM29DL164TE/BE 4 -70/90/12 MBM29DL16XTE/BE Device Bank Divisions Bank 1 Megabits Sector Sizes 0.5 Mbit Eight 8K byte/4K word Eight 8K byte/4K word, 2 Mbit three 64K byte/32K word ...
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PIN ASSIGNMENTS N. RESET 12 N.C. 13 WP/ACC 14 RY/BY ...
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MBM29DL16XTE/BE (Continued ...
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BLOCK DIAGRAM Bank 2 Address RESET State WE Control CE & OE Command BYTE Register WP/ACC Bank 1 Address MBM29DL16XTE/BE Cell Matrix (Bank ...
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MBM29DL16XTE/BE LOGIC SYMBOL RY/BY WE RESET BYTE WP/ACC 8 -70/90/12 Table 2 MBM29DL16XTE/BE Pin Configuration Pin Address Inputs -1 0 ...
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DEVICE BUS OPERATION Table 3 MBM29DL16XTE/BE User Bus Operations (BYTE = V Operation Auto-Select Manufacturer Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Group Protection (2), (4) Verify Sector Group Protection (2), (4) ...
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MBM29DL16XTE/BE FLEXIBLE SECTOR-ERASE ARCHITECTURE Table 5.1 Sector Address Tables (MBM29DL161TE) Sector Address Bank Sector Bank Address SA0 SA1 SA2 SA3 0 ...
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Table 5.2 Sector Address Tables (MBM29DL161BE) Sector Address Bank Sector Bank Address SA38 SA37 SA36 SA35 ...
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MBM29DL16XTE/BE Table 6.1 Sector Address Tables (MBM29DL162TE) Sector Address Bank Bank Sector Address SA0 SA1 SA2 SA3 ...
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Table 6.2 Sector Address Tables (MBM29DL162BE) Sector Address Bank Bank Sector Address SA38 SA37 SA36 SA35 ...
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MBM29DL16XTE/BE Table 7.1 Sector Address Tables (MBM29DL163TE) Sector Address Bank Sector SA0 SA1 SA2 SA3 SA4 ...
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Table 7.2 Sector Address Tables (MBM29DL163BE) Sector Address Bank Sector SA38 SA37 SA36 SA35 ...
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MBM29DL16XTE/BE Table 8.1 Sector Address Tables (MBM29DL164TE) Sector Address Bank Sector SA0 SA1 SA2 SA3 SA4 ...
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Table 8.2 Sector Address Tables (MBM29DL164BE) Sector Address Bank Sector SA38 SA37 SA36 SA35 ...
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MBM29DL16XTE/BE Table 9.1 Sector Group Addresses (MBM29DL16XTE) Sector Group SGA0 SGA1 SGA2 0 0 SGA3 0 1 SGA4 0 1 SGA5 1 0 SGA6 1 0 SGA7 1 ...
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... Table 9.2 Sector Group Addresses (MBM29DL16XBE) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 SGA8 SGA9 0 0 SGA10 0 1 SGA11 0 1 SGA12 1 0 SGA13 1 0 SGA14 ...
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MBM29DL16XTE/BE FUNCTIONAL DESCRIPTION • Simultaneous Operation MBM29DL16XTE/BE have feature, which is capability of reading data from one bank of memory while a program or erase operation is in progress in the other bank of memory (simultaneous operation), in addition to ...
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Standby Mode There are two ways to implement the standby mode on the MBM29DL16XTE/BE devices, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is ...
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MBM29DL16XTE/BE Byte represents the manufacturer’s code (Fujitsu = 04H) and word identifier code (MBM29DL161TE = 36H and MBM29DL161BE = 39H for 8 mode; MBM29DL161TE = 2236H and MBM29DL161BE = 2239H for ...
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Table 11.3 MBM29DL162TE/BE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL162TE Word Device Code Byte MBM29DL162BE Word Sector Group Sector Group Protection * for Byte mode. -1 *2: Outputs 01H at protected sector group addresses ...
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MBM29DL16XTE/BE Table 11.5 MBM29DL163TE/BE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL163TE Word Device Code Byte MBM29DL163BE Word Sector Group Protection * for Byte mode. -1 *2: Outputs 01H at protected sector group addresses and ...
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Table 11.7 MBM29DL164TE/BE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL164TE Word Device Code Byte MBM29DL164BE Word Sector Group Sector Group Protection * for Byte mode. -1 *2: Outputs 01H at protected sector group addresses ...
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MBM29DL16XTE/BE • Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself ...
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... SA37 and SA38, MBM29DL16XBE: SA0 and SA1) If the system asserts V on the WP/ACC pin, the device reverts to whether the two outermost 8K byte boot IH sectors were last set to be protected or unprotected ...
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MBM29DL16XTE/BE Table 12 MBM29DL16XTE/BE Command Definitions First Bus Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word 1 XXXH F0H Read/Reset Byte Word 555H 3 Read/Reset AAAH Byte ...
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Notes: 1. Address bits “H” or “L” for all address commands except or Program Address (PA), Sector 11 19 Address (SA), and Bank Address (BA). 2. Bus operations are defined in Tables 3 and ...
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MBM29DL16XTE/BE COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the read mode. Some ...
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If the software (program code) for Autoselect command is stored into the Flash memory, the device and manufacture codes should be read from the other bank where is not contain the software. To terminate the operation necessary to ...
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MBM29DL16XTE/BE The device allows reading autoselect codes at the addresses within programming sectors, since the codes are not stored in the memory. When the device exits the autoselect mode, the device reverts to the Program Suspend mode, and is ready ...
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The system can determine the status of the erase operation by using DQ RY/BY. The sector erase begins after the “t TOW the last sector erase command pulse and terminates when the data on DQ section.) at which time the ...
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MBM29DL16XTE/BE • Extended Command (1) Fast Mode MBM29DL16XTE/BE has Fast Mode function. This mode dispenses with the initial two unclock cycles required in the standard program command sequence by writing Fast Mode command into the command register. In this mode, ...
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... MBM29DL16XTE occupies the address of the byte mode 1F0000H to 1FFFFFH (word mode 0F8000H to 0FFFFFH) and the MBM29DL16XBE type occupies the address of the byte mode 000000H to 00FFFFH (word mode 000000H to 007FFFH). After the system has written the Enter Hi-ROM command sequence, the system may read the Hi-ROM region by using the addresses normally occupied by the boot sectors ...
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MBM29DL16XTE/BE • Hidden ROM (Hi-ROM) Protect Command There are two methods to protect the Hidden ROM area. One is to write the sector group protect setup command(60H), set the sector address in the Hidden ROM area and (A group protect ...
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Status Embedded Program Algorithm Embedded Erase Algorithm Program Suspend Read Program (Program Suspended Sector) Suspended Program Suspend Read Mode (Non-Program Suspended Sector) In Progress Erase Suspend Read (Erase Suspended Sector) Erase Erase Suspend Read Suspended (Non-Erase Suspended Sector) Mode Erase ...
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MBM29DL16XTE/BE • Data Polling The MBM29DL16XTE/BE devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the devices ...
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The system can use DQ to determine whether a sector is actively erasing or is erase-suspended. When a bank 6 is actively erasing (that is, the Embedded Erase Algorithm is in progress), DQ Erase Suspend mode, DQ stops toggling. Successive ...
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MBM29DL16XTE/BE For example, DQ and DQ can be used together to determine if the erase-suspend-read mode is in progress (DQ toggles while DQ does not.) See also Table 14 and Figure 12 Furthermore, DQ can also ...
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Low V Write Inhibit CC To avoid initiation of a write cycle during V than V (min < the command register is disabled and all internal program/erase circuits are disabled. LKO CC LKO Under this ...
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... D7-4: volt, D3-0: 100 mvolt 2Ah 0000h ACC (Acceleration) Supply 2Bh 0000h Maximum 00h = Not Supported, 2Ch 0002h D7-4: volt, D3-0: 100 mvolt Boot Type 2Dh 0007h 02h = MBM29DL16XBE 2Eh 0000h 03h = MBM29DL16XTE 2Fh 0020h 30h 0000h Program Suspend 00h = Not Supported 31h 001Eh 01h = Supported 32h ...
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ABSOLUTE MAXIMUM RATINGS(See WARNING) Parameter Symbol Storage Temperature Tstg Ambient Temperature with T A Power Applied Voltage with respect to Ground All pins except OUT OE, RESET (Note 1) Power Supply Voltage V ...
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MBM29DL16XTE/BE MAXIMUM OVERSHOOT/UNDERSHOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 This waveform is applied for A 44 -70/90/ ...
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ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current (Note Active Current (Note Current (Standby Current (Standby, Reset) ...
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MBM29DL16XTE/BE (Continued) Parameter Output Low Voltage Level Output High Voltage Level Low V Lock-Out Voltage CC Notes: 1. The I current listed includes both the DC operating current and the frequency dependent component active while Embedded Algorithm ...
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AC Characteristics • Read Only Operations Characteristics Parameter Symbols JEDEC Standard t t Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable ...
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MBM29DL16XTE/BE • Write/Erase/Program Operations Parameter Symbols JEDEC Standard t t Write Cycle Time AVAV Address Setup Time AVWL AS Address Setup Time to OE Low During — t ASO Toggle Bit Polling t t Address Hold Time ...
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Parameter Symbols JEDEC Standard — Setup Time to WE Active (Note 2) CSP — t Recover Time From RY/BY RB — t RESET Pulse Width RP — t RESET High Level Period Before Read RH — t ...
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MBM29DL16XTE/BE TIMING DIAGRAM • Key to Switching Waveforms Addresses Outputs Figure 5.1 AC Waveforms for Read Operations 50 -70/90/12 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from ...
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Addresses RESET High-Z Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations MBM29DL16XTE/ Addresses Stable t ACC t CE Output Valid -70/90/ ...
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MBM29DL16XTE/BE 3rd Bus Cycle Addresses 555H GHWL A0H Data Notes address of the memory location to be programmed data to be programmed ...
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Bus Cycle Addresses 555H GHEL Data A0H Notes address of the memory location to be programmed data to be programmed at ...
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MBM29DL16XTE/BE 1 Addresses * GHWL WE Data t VCS V CC *1: These waveforms are for the 16 mode. (The addresses differ from 8 mode.) * the sector address for Sector Erase. Addresses ...
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OEH WE Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). 7 Figure 9 AC Waveforms for Data Polling ...
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MBM29DL16XTE/BE Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). 6 Figure 10 AC Waveforms for Toggle Bit I during Embedded ...
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Read Command t RC Address BA1 GHWL WE Valid DQ Output Note: This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address of Bank 1. BA2: Address of ...
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MBM29DL16XTE/ RY/BY Figure 13 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY 58 -70/90/12 The rising edge of the last write pulse READY Figure 14 RESET, RY/BY Timing Diagram Entire programming or erase ...
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CE BYTE (DQ t ELFH Figure 15 Timing Diagram for Word Mode Configuration CE BYTE t ELFL Data Output ( ...
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MBM29DL16XTE/ SGAX VLHT ...
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VIDR t VCS RESET VLHT RY/BY Figure 19 Temporary Sector Group Unprotection Timing Diagram MBM29DL16XTE/BE Program or Erase Command Sequence Unprotection period -70/90/12 t VLHT VLHT 61 ...
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MBM29DL16XTE/ VCS t VLHT RESET t VIDR Add Data 60H SGAX : Sector Group Address to be protected SGAY : Next Sector Group Address to be protected TIME-OUT ...
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VACCR t VCS V ACC 3 V WP/ACC RY/BY Figure 21 Accelerated Program Timing Diagram MBM29DL16XTE/BE VLHT Program or Erase Command Sequence Acceleration period -70/90/12 t VLHT VLHT 63 ...
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MBM29DL16XTE/BE FLOW CHART EMBEDDED ALGORITHMS Increment Address * : The sequence is applied for The addresses differ from 64 -70/90/12 Start Write Program Command Sequence (See below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence* ...
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EMBEDDED ALGORITHMS Chip Erase Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for The addresses differ from 8 mode. Figure 23 Embedded Erase MBM29DL16XTE/BE Start Write Erase Command Sequence (See below) Data Polling ...
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MBM29DL16XTE/BE Note rechecked even -70/90/12 Start Read ( Byte address for programming 0 7 Addr Any of the sector addresses within Yes DQ = Data? 7 ...
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No Note rechecked even changing to “1” Figure 25 Toggle Bit Algorithm MBM29DL16XTE/BE Start Read ( Bank address being executed 0 7 Addr Embedded ...
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MBM29DL16XTE/BE Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode Figure 26 Sector Group Protection Algorithm 68 -70/90/12 Start Setup Sector Group Addr ...
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Temporary Sector Group Unprotection Completed Notes: 1. All protected sector groups are unprotected. 2. All previously protected sector groups are protected once again. Figure 27 Temporary Sector Group Unprotection Algorithm MBM29DL16XTE/BE Start RESET = V ID (Note 1) Perform Erase ...
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MBM29DL16XTE/BE FAST MODE ALGORITHM Increment Address Note: The sequence is applied for The addresses differ from Figure 28 Embedded Program 70 -70/90/12 Start 555H/AAH 2AAH/55H 555H/20H XXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ...
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Device is Operating in No Extended Sector Group Temporary Sector Group Unprotection Mode To Setup Sector Group Protection Write XXXH/60H To Sector Group Protection (A 0 Increment PLSCNT To Verify Sector Group Protection Write SGA/40H (A 0 Read from Sector ...
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MBM29DL16XTE/BE ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29DL16X T E DEVICE NUMBER/DESCRIPTION MBM29DL16X 16Mega-bit (2M 3.0 V-only Read, Program, and Erase Valid Combinations MBM29DL161TE/BE MBM29DL162TE/BE ...
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PACKAGE DIMENSIONS 48-pin plastic TSOP(I) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 2000 FUJITSU LIMITED F48029S-3c-4 C 48-pin plastic TSOP(I) (FPT-48P-M20) LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) 20.00±0.20 ...
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MBM29DL16XTE/BE (Continued) 48-pin plastic FBGA (BGA-48P-M11) 8.00±0.20(.315±.008) INDEX C0.25(.010) 0.10(.004) 1998 FUJITSU LIMITED B480011S-1C -70/90/12 Note: The actual shape of coners may differ from the dimension. +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00±0.20 ...
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MBM29DL16XTE/BE FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa 211-8588, Japan Tel: +81-44-754-3763 Fax: +81-44-754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. 3545 ...