MBM29DL34TF Fujitsu Media Devices, MBM29DL34TF Datasheet
MBM29DL34TF
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MBM29DL34TF Summary of contents
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... CMOS BIT MBM29DL34TF/BF DESCRIPTION The MBM29DL34TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3 supply. 12 and 5 ...
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... MBM29DL34TF/BF are organized into two physical banks; Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simul- taneously taking place on the other bank ...
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... When addresses remain stable, automatically switch themselves to low power mode. • Low V write inhibit 2 • Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device MBM29DL34TF/BF 2 PROMs Normal Bend Type, TR Reversed Bend Type) 70 (Continued) ...
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... Temporary Sector Group Unprotection Temporary sector group unprotection via the RESET pin. • In accordance with CFI (Common Flash Memory Interface Embedded Erase and Embedded Program Device Part Number MBM29DL34TF MBM29DL34BF are trademarks of Advanced Micro Devices, Inc. Bank and Sector Organization Table ...
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... WE 12 RESET 13 N.C. 14 WP/ACC 15 RY/ MBM29DL34TF/BF TSOP (1) (Marking Side BYTE Normal Bend 37 V ...
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... MBM29DL34TF/BF (Continued RY/ FBGA (TOP VIEW) Marking side BYTE RESET WP/ACC ...
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... RESET Hardware Reset Pin/Temporary Sector Group Unprotection BYTE Selects Byte (8-bit) or Word (16-bit) mode WP/ACC Hardware Write Protection/Program Acceleration V Device Power Supply CC V Device Ground SS N.C. No Internal Connection LOGIC SYMBOL 21 MBM29DL34TF/BF Function ...
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... MBM29DL34TF/BF BLOCK DIAGRAM Bank 2 Address RESET State WE Control CE & OE Command BYTE Register WP/ACC Bank 1 Address 8 70 Cell Matrix (Bank 2) X-Decoder RY/BY Status Control X-Decoder Cell Matrix (Bank ...
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... DEVICE BUS OPERATION MBM29DL34TF/BF User Bus Operations Table (Word Mode : BYTE Operation Standby H Autoselect Manufacturer Code Autoselect Device Code * Extended Auto-Select Device Code * Read * L Output Disable L Write (Program/Erase) L Enable Sector Group L Protection * Verify Sector Group Protection ...
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... MBM29DL34TF/BF MBM29DL34TF/BF User Bus Operations Table (Byte Mode : BYTE Operation Standby H X Autoselect L L Manufacturer Code * 1 Autoselect Device Code Extended Auto-Select 1 Device Code * L L Read * Output Disable L H Write (Program/Erase Enable Sector Group L V Protection * ...
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... MBM29DL34TF/BF Command Definitions Table * First bus Bus Command write write cycle sequence cycles req’d Addr. Data Addr. Data Word 2 Reset * 1 XXXh F0h Byte Word 555h Reset * 2 3 Byte AAAh Word 555h Autoselect 4 (Device ID) Byte AAAh Word 555h Program 4 Byte AAAh ...
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... Exit * 10 Byte AAAh *1 : The command combinations not described in “MBM29DL34TF/BF Command Definitions Table” are illegal Both of these reset commands are equivalent Erase Suspend and Erase Resume command are valid only during a sector erase operation This command is valid during Fast Mode The Reset from Fast Mode command is required to return to the read mode when the device is in Fast Mode. ...
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... MBM29DL34TF Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code BA* 3 Byte Device Code BA* 3 Word Sector Sector Group Protection Group Addresses * for Byte mode. At Byte mode Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. ...
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... MBM29DL34TF/BF MBM29DL34BF Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code BA* Byte Device Code BA* Word Sector Sector Group Protection Group Addresses * for Byte mode. At Byte mode Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. ...
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... SECTOR-ERASE ARCHITECTURE Sector Address Table (MBM29DL34TF) Sector address Sec- Bank Bank address tor SA0 SA1 SA2 SA3 SA4 SA5 ...
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... MBM29DL34TF/BF Sector address Sec- Bank Bank address tor SA33 SA34 SA35 SA36 SA37 SA38 SA39 Bank SA40 SA41 ...
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... SA53 SA52 SA51 SA50 SA49 MBM29DL34TF/BF Sector size (Kbytes/ Address range Kwords 8/4 3F8000h to 3F9FFFh 1FC000h to 1FCFFFh 8/4 3FA000h to 3FBFFFh 1FD000h to 1FDFFFh ...
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... MBM29DL34TF/BF Sector address Sec- Bank Bank address tor SA48 SA47 SA46 SA45 SA44 SA43 SA42 SA41 SA40 SA39 ...
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... SA2 SA1 SA0 Note : The address range The address range MBM29DL34TF/BF Sector size (Kbytes/ Address range Kwords 64/32 070000h to 07FFFFh 038000h to 03FFFFh 64/32 ...
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... MBM29DL34TF/BF Sector Group Addresses Table (MBM29DL34TF) Sector group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 1 SGA6 0 1 SGA7 0 1 SGA8 0 1 SGA9 1 0 SGA10 1 0 SGA11 1 0 SGA12 1 0 SGA13 1 1 SGA14 1 1 SGA15 ...
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... SGA15 SGA16 SGA17 SGA18 SGA19 SGA20 SGA21 SGA22 SGA23 SGA24 MBM29DL34TF/ ...
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... MBM29DL34TF/BF Common Flash Memory Interface Code Table Description Query-unique ASCII string “QRY” Primary OEM Command Set 02h : AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h not applicable) Address for Alternate OEM Extended Table V Min (write/erase) DQ ...
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... Bank Organization 00h If data at 4Ah is zero. X Number of Banks Bank A Region Information X Number of sectors in Bank A Bank B Region Information X Number of sectors in Bank B Bank C Region Information X Number of sectors in Bank C Bank D Region Information X Number of sectors in Bank D MBM29DL34TF/ 44h 0033h 45h ...
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... MBM29DL34TF/BF FUNCTIONAL DESCRIPTION 1. Simultaneous Operation The device features functions that enable reading of data from one memory bank while a program or erase operation is in progress in the other memory bank (simultaneous operation addition to conventional features (read, program, erase, erase-suspend read, and erase-suspend program) . The bank can be selected by bank ...
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... In Word mode, a read cycle from address 00h returns the manufacturer’s code (Fujitsu address 01h outputs device code (MBM29DL34TF=2250h, MBM29DL34BF=2253h). Notice that the above applies to Word mode; the addresses and codes differ from those of Byte mode (Refer to “MBM29DL34TF/BF Sector Group Protection Verify Autoselect Codes Tables” and “MBM29DL34TF/BF Extended Autoselect Code Tables” ...
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... Byte/Word Configuration The BYTE pin selects the Byte (8-bit) mode or Word (16-bit) mode for the MBM29DL34TF/BF devices. When this pin is driven high, the devices operate in the Word (16-bit) mode. The data is read and programmed ...
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... Removing V from the WP/ACC pin returns the device to normal operation. Do not remove V ACC ACC pin while programming. See “18. Accelerated Program Timing Diagram” in Erase operation at Acceleration mode is strictly prohibited. MBM29DL34TF/BF from WP/ ACC TIMING DIAGRAM ...
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... A read cycle at address (BA) 01h outputs device code. Notice that the above applies to Word mode. The addresses and codes differ from those of Byte mode. (Refer to “MBM29DL34TF/BF Sector Group Protection Verify Autoselect Codes Tables” and “MBM29DL34TF/BF Extended Autoselect Code Tables” ...
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... Erase algorithm. Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase Algorithm the devices will automatically program and verify the entire memory for an all zero data pattern prior MBM29DL34TF/BF (Data Polling equivalent to data written to this bit at which ...
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... MBM29DL34TF/BF to electrical erase (Preprogram function) . The system is not required to provide any controls or timings during these operations. The system can determine the status of the erase operation by using DQ (Toggle Bit RY/BY output signal. The chip erase begins on the rising edge of the last CE or WE, whichever happens first from last command sequence and completes when the data on DQ Status section ...
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... If the output data is logic “0”, write extended sector group protection command (60h) again. To terminate the operation, set RESET pin to V Timing Diagram” in TIMING DIAGRAM and “7. Extended Sector Group Protection Algorithm” in CHART.) MBM29DL34TF/BF bit will be at logic “1”, and DQ 7 and DQ to determine if the erase operation has been ...
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... The HiddenROM region is 256 bytes in length and is stored at the same address of the 8 KB sectors. The MBM29DL34TF occupies the address of the byte mode 3FE000h to 3FE0FFh (word mode 1FF000h to 1FF07Fh) and the MBM29DL34BF type occupies the address of the byte mode 000000h to 0000FFh (word mode 000000h to 00007Fh) ...
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... Erase Suspend Program Suspended (Non-Erase Suspended Sector) Mode *1: Successive reads from the erasing or erase-suspend sector will cause DQ *2: Reading from non-erase suspend sector address will indicate logic “1” at the DQ MBM29DL34TF/ and OE, set the sector address in the HiddenROM area ...
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... MBM29DL34TF/BF 14 Data Polling The device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the devices will produce reverse data last written to DQ device will produce the true data last written to DQ the device will produce a “ ...
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... Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA) . The OE and WE pins will control the output disable functions as described in “MBM29DL34TF/BF User Bus Operations Tables (BYTE = V ...
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... MBM29DL34TF/BF again whether the Toggle Bit is toggling, since the Toggle Bit may have stopped toggling just the Toggle Bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data ...
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... Device user is able to protect each sector group individually to store and protect data. Protection circuit voids both program and erase commands that are addressed to protected sectors. Any commands to program or erase addressed to protected sector are ignored. (See “8. Sector Group Protection” in SCRIPTION.) MBM29DL34TF/ ...
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... OUT ACC GND 2.0 V for periods ns and RESET pins is 0.5 V. During voltage transitions applied. CC Part No. T MBM29DL34TF/ MBM29DL34TF/ GND Rating Unit Min Max 55 125 ° °C 0 0.5 4.0 V 0.5 13.0 V ...
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... MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT 0.6 V 0 2.0 V 14 Note : This waveform is applied for A MBM29DL34TF/ Maximum Undershoot Waveform Maximum Overshoot Waveform OE, and RESET. 9 Maximum Overshoot Waveform ...
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... MBM29DL34TF/BF DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, Reset Current CC (Automatic Sleep Mode Active Current * 5 CC (Read-While-Program) V Active Current * 5 CC (Read-While-Erase) V Active Current ...
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... Output Load : 1TTL gate and 100 pF Input rise and fall times : 5 ns Input pulse levels : 0 Timing measurement reference level Input : Output : Device Under Test Note : C 100 pF including jig capacitance L MBM29DL34TF/BF Symbol JEDEC Standard t t AVAV AVQV ACC t t ELQV CE t ...
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... MBM29DL34TF/BF • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time Data Hold Time Read Output Enable Hold ...
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... Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-Out Time Erase Suspend Transition Time *1 : Does not include the preprogramming time For Sector Group Protection operation This timing is limited for Accelerated Program operation only. MBM29DL34TF/BF Symbol 70 JEDEC Standard Min Typ ...
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... MBM29DL34TF/BF ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle Notes : Typical Erase conditions T Typical Program conditions T TSOP (1) PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance WP/ACC Pin Capacitance ...
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... TIMING DIAGRAM • Key to Switching Waveforms WAVEFORM 1. Read Operation Timing Diagram Address Outputs MBM29DL34TF/BF INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Change Change from from May Will Change Change from from "H" or "L" ...
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... MBM29DL34TF/BF 2. Hardware Reset/Read Operation Timing Diagram Address RESET High-Z Outputs 3. Alternate WE Controlled Program Operation Timing Diagram 3rd Bus Cycle 555h Address GHWL A0h Data Notes : PA is address of the memory location to be programmed data to be programmed at byte address. ...
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... D is the output of the data written to the device. OUT Figure indicates the last two bus cycles out of four bus cycle sequence. These waveforms are for the 16 mode (the addresses differ from 8 mode) . MBM29DL34TF/BF 3rd Bus Cycle Data Polling 555h ...
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... MBM29DL34TF/BF 5. Chip/Sector Erase Operation Timing Diagram Address 555h GHWL WE Data t VCS the sector address for Sector Erase. Addresses Note : These waveforms are for the 16 mode (the addresses differ from 8 mode 2AAh 555h 555h ...
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... Valid Data (the device has completed the Embedded operation Toggle Bit I during Embedded Algorithm Operation Timing Diagram Address OEH / Data t BUSY RY/ stops toggling (the device has completed the Embedded operation MBM29DL34TF/ OEH WHWH1 or WHWH2 Output Flag ...
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... MBM29DL34TF/BF 8. Bank-to-Bank Read/Write Timing Diagram Read t RC Address BA1 GHWL WE Valid DQ Output Note : This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1 : Address corresponding to Bank 1 BA2 : Address corresponding to Bank vs Enter Erase Embedded ...
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... CE WE RY/BY 11. RESET, RY/BY Timing Diagram WE RESET RY/BY 12. Timing Diagram for Word Mode Configuration CE BYTE ELFH MBM29DL34TF/BF Rising edge of the last write pulse Entire programming or erase operations t BUSY READY t CE Data Output Data Output ( ( ...
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... MBM29DL34TF/BF 13. Timing Diagram for Byte Mode Configuration CE BYTE t ELFL 14. BYTE Timing Diagram for Write Operations BYTE 52 70 Data Output Data Output ( ( ACC FLQZ Falling edge of the last write signal ...
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... VLHT VLHT WE CE Data t VCS V CC SGAX : Sector Group Address to be protected SGAY : Next Sector Group Address to be protected Note : byte mode MBM29DL34TF/BF t VLHT t WPP t OESP t CSP 70 SGAY t VLHT 01h ...
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... MBM29DL34TF/BF 16. Temporary Sector Group Unprotection Timing Diagram VCS RESET CE WE RY/ VIDR t Program or Erase VLHT Command Sequence Unprotection Period t VLHT t VLHT ...
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... WC VIDR Address Data 60h SGAX : Sector Group Address to be protected SGAY : Next Sector Group Address to be protected TIME-OUT : Time-Out window MBM29DL34TF/ SGAX TIME-OUT 60h 40h 250 s (Min) 70 SGAX SGAY 01h 60h ...
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... MBM29DL34TF/BF 18. Accelerated Program Timing Diagram VCS V ACC V IH WP/ACC CE WE RY/ VACCR t VLHT Program Command Sequence Acceleration Period t VLHT t VLHT ...
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... FLOW CHART 1. Embedded Program TM Algorithm EMBEDDED ALGORITHMS Increment Address Notes : The sequence is applied for The addresses differ from MBM29DL34TF/BF Start Write Program Command Sequence (See Below) Data Polling Device No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) ...
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... MBM29DL34TF/BF 2. Embedded Erase TM Algorithm EMBEDDED ALGORITHMS Chip Erase Command Sequence (Address/Command) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Notes : The sequence is applied for The addresses differ from 58 70 Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm No in progress ...
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... Data Polling Algorithm rechecked even MBM29DL34TF/BF VA Start Read Byte ( Addr. VA Yes DQ Data Yes Read Byte ( Addr. VA Yes DQ Data Fail Pass “1” because DQ may change simultaneously with Valid Address for programming ...
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... MBM29DL34TF/BF 4. Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether or not it is toggling Recheck toggle bit because it may stop toggling Start VA *1 Read Addr Read Addr Toggle Bit Toggle? Yes Yes ...
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... Sector Group Protection Algorithm Increment PLSCNT PLSCNT Remove V Write Reset Command Device Failed * : byte mode MBM29DL34TF/BF Start Setup Sector Group Addr PLSCNT RESET ...
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... MBM29DL34TF/BF 6. Temporary Sector Group Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are reprotected Start RESET Perform Erase or Program Operations RESET V IH Temporary Sector Group Unprotection Completed *2 ...
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... Extended Sector Group Protection Algorithm Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT 25? Yes Remove V from RESET ID Write Reset Command Device Failed MBM29DL34TF/BF Start RESET V ID Wait Extended Sector Group Protection Entry? Yes To Setup Sector Group Protection Write XXXh/60h PLSCNT 1 ...
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... MBM29DL34TF/BF 8. Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from 64 70 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address ? Yes Programming Completed (BA) XXXh/90h XXXh/F0h 16 mode ...
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... TSOP (1) MBM29DL34BF70TN (FPT-48P-M19) Normal Bend 48-pin plastic FBGA MBM29DL34BF70PBT (BGA-48P-M12) MBM29DL34 T F DEVICE NUMBER/DESCRIPTION MBM29DL34 32 Mega-bit (4 M 3.0 V-only Read, Program, and Erase MBM29DL34TF/BF Package Access Time (ns PACKAGE TYPE TN 48-Pin Thin Small Outline Package (TSOP) Normal Bend PBT ...
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... MBM29DL34TF/BF PACKAGE DIMENSIONS 48-pin plastic TSOP (1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 ± * 18.40 (.724 ± "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6 Note Values do not include resin protrusion. Resin protrusion and gate protrusion are 0.15 (.006) Max (each side) . Note 2) Pins width and pins thickness include plating thickness. ...
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... FBGA (BGA-48P-M12) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48012S-c-3-3 C MBM29DL34TF/BF +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00±0.20 4.00(.157) (.236±.008 (48-ø.018±.004) Dimensions in mm (inches) Note : The values in parentheses are reference values ...
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... MBM29DL34TF/BF FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device ...