MBM29DS163TE Fujitsu Media Devices, MBM29DS163TE Datasheet
MBM29DS163TE
Related parts for MBM29DS163TE
MBM29DS163TE Summary of contents
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... MBM29DS163TE/BE DESCRIPTION The MBM29DS163TE/ M-bit, 1.8 V-only Flash memory organized bytes of 8 bits each words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be programmed in system with standard system 1 required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. ...
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... MBM29DS163TE/BE (Continued) The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 1.8 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank ...
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... Fast Programming Function by Extended Command • Temporary Sector Group Unprotection Temporary sector group unprotection via the RESET pin. • In accordance with CFI (Common Flash Memory Interface Embedded Erase and Embedded Program MBM29DS163TE/BE 2 PROMs Normal Bend Type, TR Reversed Bend Type) TM are trademarks of Advanced Micro Devices 10 Inc ...
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... MBM29DS163TE/BE 12 Normal Bend (FPT-48P-M19) 24 (Marking Side MBM29DS163TE/BE 13 Reverse Bend (FPT-48P-M20 BYTE ...
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... RESET A3 B3 RY/BY WP/ ACC MBM29DS163TE/BE FBGA (TOP VIEW) Marking Side BYTE N. ...
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... MBM29DS163TE/BE PIN DESCRIPTION Pin RY/BY RESET BYTE WP/ACC N. Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Ready/Busy Output Hardware Reset Pin/Temporary Sector Group Unprotection Selects 8-bit or 16-bit mode Hardware Write Protection/Program Acceleration ...
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... Bank 2 Address RESET State WE Control & CE Command OE Register BYTE WP/ACC Bank 1 Address LOGIC SYMBOL 20 MBM29DS163TE/BE Cell Matrix (Bank 2) X-Decoder RY/BY Status Control X-Decoder Cell Matrix (Bank RY/BY RESET BYTE ...
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... Output Disable Write (Program/Erase) Enable Sector Group Protection Verify Sector Group Protection* * Temporary Sector Group Unprotection* Reset (Hardware) /Standby Boot Block Sector Write Protection MBM29DS163TE/BE User Bus Operations (BYTE Operation Auto-Select Manufacturer Code* 1 Auto-Select Device Code Read* Standby Output Disable ...
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... MBM29DS163TE/BE Command Definitions Table Bus First Bus Write Command Write Cycle Cy- Sequence cles Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Req’d Word Read/Reset XXXh F0h Byte 555h Word 1 Read/Reset* 3 AAAh Byte 555h Word Autoselect ...
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... The fourth bus cycle is only for read. Notes : Address bits Sector Address (SA) , and Bank Address (BA) . Bus operations are defined in “MBM29DS163TE/BE User Bus Operation (BYTE = V “MBM29DS163TE/BE User Bus Operation (BYTE = V RA Address of the memory location to be read IA Autoselect read address sets both the bank address specified at (A ...
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... Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Command combinations not described in “MBM29DS163TE/BE Command Definitions” Table are il- legal. MBM29DS163TE/ ...
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... MBM29DS163TE/BE MBM29DS163TE/BE Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code MBM29DS163TE Device Code MBM29DS163BE Extend MBM29DS163TE/BE Code Sector Group Protection * for Byte mode Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. ...
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... FLEXIBLE SECTOR-ERASE ARCHITECTURE Sector Address Table (MBM29DS163TE) Sector Address Sec- Bank Bank Address tor SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 ...
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... MBM29DS163TE/BE (Continued) Sector Address Sec- Bank Bank Address tor SA24 SA25 SA26 SA27 SA28 SA29 SA30 Bank 1 SA31 SA32 SA33 ...
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... SA19 SA18 SA17 SA16 SA15 MBM29DS163TE/BE Sector Size ( / Address Range Kbytes ) Kwords 64/32 1F0000h to 1FFFFFh 64/32 1E0000h to 1EFFFFh 64/32 1D0000h to 1DFFFFh 0E8000h to 0EFFFFh 64/32 1C0000h to 1CFFFFh 0E0000h to 0E7FFFh ...
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... MBM29DS163TE/BE (Continued) Sector Address Sec- Bank Bank Address tor SA14 SA13 SA12 SA11 SA10 SA9 SA8 Bank 1 SA7 SA6 SA5 ...
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... Sector Group Addresses (MBM29DS163TE) Table Sector Group SGA0 SGA1 SGA2 0 0 SGA3 0 1 SGA4 0 1 SGA5 1 0 SGA6 1 0 SGA7 SGA8 SGA9 1 1 SGA10 1 1 SGA11 1 1 SGA12 1 1 SGA13 1 1 SGA14 ...
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... MBM29DS163TE/BE Sector Group Addresses (MBM29DS163BE) Table Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 SGA8 SGA9 0 0 SGA10 0 1 SGA11 0 1 SGA12 1 0 SGA13 1 0 SGA14 ...
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... Max timeout for full chip erase 2 times typical Device Size 2 N byte Flash Device Interface description Max number of byte in multi-byte write 2 N Number of Erase Block Regions within device Erase Block Region 1 Information Erase Block Region 2 Information MBM29DS163TE/BE A not applicable times typical ...
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... ACC (Acceleration) Supply Maximum 00h Not Supported 100 Boot Type 02h MBM29DS163BE 03h MBM29DS163TE Program Suspend 00h Not Supported 01h Supported 40h 41h 42h 43h 44h 45h 46h 47h 48h ...
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... Under this condition the current consumed is less than 5 A max. Once the RESET pin is taken high, the device requires the standby mode the outputs are in the high impedance state, independently of the OE input. MBM29DS163TE/BE ) with zero latency. 15 seven sectors) and Bank 2 (64 KB ...
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... IL identifier code. These two bytes/words are given in MBM29DS163TE/BE Sector Group Protection Verify Au- toselect Codes” Table and “Expanded Autoselect Code “ Table in “ read the proper device codes when executing the autoselect, A Group Protection Verify Autoselect Codes” ...
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... and A ) should be set to the sector to be protected. “Sector Address (MBM29DS163TE)” Table and “Sector 12 Address (MBM29DS163BE)” Table in “ address for each of the seventy one (71) individual sectors, and t“Sector Group Addresses (MBM29DS163TE)” Table and “Sector Group Addresses (MBM29DS163BE)” Table in “ FLEXIBLE SECTOR-ERASE ARCHITEC- TURE” ...
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... SA37 and SA38, MBM29DS163BE : SA0 and SA1) If the system asserts V on the WP/ACC pin, the device reverts to whether the two outermost 8 K byte boot IH sectors were last set to be protected or unprotected ...
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... Following the command write, a read cycle from address (BA) 00h retrieves the manufacture code of 04h. A read cycle from address (BA) 01h for 16 ( (BA) 02h for 8) returns the device code. (See “MBM29DS163TE/ BE Sector Group Protection Verify Autoselect Codes” Table and “Expanded Autoselect Code “ Table in “ DEVICE BUS OPERATION” ...
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... MBM29DS163TE/BE Byte/Word Programming The device is programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle operation. There are two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses are latched on the falling edge WE, whichever happens later and the data is latched on the rising edge WE, whichever happens first ...
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... TOW Multiple sectors are erased concurrently by writing the six bus cycle operations on “MBM29DS163TE/BE Com- mand Definitions” in “ USER BUS OPERATION”. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than “ ...
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... MBM29DS163TE/BE Erase Suspend/Resume The Erase Suspend command allows the user to interrupt Sector Erase operation and then perform data reads from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. The Erase Suspend command is ignored if written during the Chip Erase operation or Embedded Program Algorithm ...
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... The HiddenROM region bytes in length and is stored at the same address of the sectors. The MBM29DS163TE occupies the address of the byte mode 1F0000h to 1FFFFFh (word mode 0F8000h to 0FFFFFh) and the MBM29DS163BE type occupies the address of the byte mode 000000h to 00FFFFh (word mode 000000h to 007FFFh) ...
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... MBM29DS163TE/BE HiddenROM Protect Command There are two methods to protect the HiddenROM area. One is to write the sector group protect setup command (60h) , set the sector address in the HiddenROM area and (A protect command (60h) during the HiddenROM mode. The same command sequence could be used because just as the extension sector group protect in the past except that the HiddenROM mode and it does not apply high voltage to RESET pin. Please refer to “ ...
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... Embedded Erase Algorithm is in progress Erase Suspend mode, DQ stops toggling. Successive read cycles during erase-suspend-program cause toggle.To operate toggle bit function properly must be high when bank address is changed. MBM29DS163TE/BE to toggle. Reading from non-erase 2 bit Upon completion of the Embedded Program Algorithm, an attempt to 7 ...
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... Data Polling is the only operating function of device under this condition. The CE circuit will partially power down device under these conditions (to approximately 2 mA) . The OE and WE pins will control the output disable functions as described in MBM29DS163TE/BE User Bus Operations (BYTE = V )” ...
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... Data Protection The device is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up device automatically resets internal state MBM29DS163TE/BE is high (see the section through successive read cycles, deter- ...
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... MBM29DS163TE/BE machine in Read mode. Also, with its control register architecture, alteration of memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from V and power-down transitions or system noise. Write Pulse “Glitch” Protection Noise pulses of less than 3 ns (typical) on OE, CE will not initiate a write cycle ...
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... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. MBM29DS163TE/BE Symbol Min Tstg ...
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... MBM29DS163TE/BE MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT 0 0 12 Note : This waveform is applied for Maximum Undershoot Waveform Maximum Overshoot Waveform OE, and RESET. 9 Maximum Overshoot Waveform 2 ...
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... Embedded Algorithm (program or erase progress Automatic sleep mode enables the low power mode when address remain stable for 150 ns Applicable for only V applying Embedded Algorithm (program or erase progress. (@5 MHz) MBM29DS163TE/BE Symbol Test Conditions ...
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... MBM29DS163TE/BE AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses OE, Whichever Occurs First RESET Pin Low to Read Mode ...
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... Rise Time Rise Time ACC Voltage Transition Time* 2 Write Pulse Width Setup Time to WE Active* CE Setup Time to WE Active* 2 Recover Time From RY/BY RESET Pulse Width MBM29DS163TE/BE Symbol Value * Min Typ JEDEC Standard t t 100 AVAV AVWL AS t ...
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... MBM29DS163TE/BE (Continued) Parameter RESET High Level Period Before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time Power On / Off Time *1 : Does not include the preprogramming time. ...
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... FBGA PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance WP/ACC Pin Capacitance Notes : Test conditions pin capacitance is stipulated by output capacitance MBM29DS163TE/BE Limit Min Typ Max 360 8 300 50 cycle Symbol Test Setup C V ...
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... MBM29DS163TE/BE TIMING DIAGRAM • Key to Switching Waveforms Address Outputs 42 10 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Change Change from from May Will Change Change from from "H" or "L" Changing Any Change ...
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... Address RESET High-Z Outputs Hardware Reset/Read Operation Timing Diagram t PS RESET 1 Address Data Power On/Off Timing Diagram MBM29DS163TE/ Address Stable t ACC t CE Output Valid Valid Data In Valid Data Out ACC 1 ...
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... MBM29DS163TE/BE 3rd Bus Cycle 555h Address GHWL WE t A0h Data Notes : PA is address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device the output of the data written to the device. ...
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... OUT Figure indicates the last two bus cycles out of four bus cycle sequence. These waveforms are for the 16 mode (the addresses differ from 8 mode) . Alternate CE Controlled Program Operation Timing Diagram MBM29DS163TE/BE Data Polling 555h PA PA ...
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... MBM29DS163TE/BE Address GHWL WE Data t VCS the sector address for Sector Erase. Addresses Note: These waveforms are for the 16 mode (the addresses differ from 8 mode) . Chip/Sector Erase Operation Timing Diagram 46 10 555h 2AAh 555h 555h ...
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... Data Data BUSY RY/ Valid Data (the device has completed the Embedded operation Data Polling during Embedded Algorithm Operation Timing Diagram MBM29DS163TE/ OEH Valid Data t WHWH1 Output Flag t EOE High-Z ...
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... MBM29DS163TE/BE Address OEH Data Toggle Data DQ / BUSY RY/ stops toggling (the device has completed the Embedded operation Toggle Bit I during Embedded Algorithm Operation Timing Diagram AHT ASO AHT AS t CEPH t OEPH Toggle Data ...
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... Bank-to-Bank Read/Write Timing Diagram Enter Erase Embedded Suspend Erasing WE Erase Suspend Erase Read Toggle DQ and with Note : DQ is read from the erase-suspended sector. 2 MBM29DS163TE/BE Read Command Read BA2 BA2 BA1 BA1 (555h) (PA) t ACC ...
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... MBM29DS163TE/ RY/BY RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/ Rising edge of the last write signal Entire programming or erase operations t BUSY READY RESET, RY/BY Timing Diagram ...
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... Word Mode Configuration Timing Diagram CE BYTE t ELFL Data Output ( FLQZ Byte Mode Configuration Timing Diagram BYTE BYTE Timing Diagram for Write Operations MBM29DS163TE/ Data Output ( Data Output ( ...
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... MBM29DS163TE/ VLHT VLHT WE CE Data t VCS V CC SPAX : Sector Group Address to be protected SPAY : Sector Group Address to be protected Note : byte mode. ...
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... VIDR t VCS RESET VLHT RY/BY Temporary Sector Group Unprotection Timing Diagram MBM29DS163TE/BE Program or Erase Command Sequence Unprotection Period 10 t VLHT t VLHT 53 ...
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... MBM29DS163TE/ VCS RESET t VLHT t VIDR Add Data SPAX : Sector Group Address to be protected SPAY : Next Sector Group Address to be protected TIME-OUT : Time-Out window Extended Sector Group Protection Timing Diagram SPAX TIME-OUT t WP 60h ...
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... VACCR t VCS V ACC V IH WP/ACC VLHT RY/BY Accelerated Program Timing Diagram MBM29DS163TE/BE Program Command Sequence Acceleration Period 10 t VLHT t VLHT 55 ...
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... MBM29DS163TE/BE FLOW CHART EMBEDDED ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from 56 10 Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) 555h/AAh 2AAh/55h 555h/A0h Program Address/Program Data 16 mode ...
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... EMBEDDED ALGORITHM No Chip Erase Command Sequence* (Address/Command) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h * : The sequence is applied for 16 mode. The addresses differ from 8 mode. MBM29DS163TE/BE Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm in progress Data FFh ? Yes Erasure Completed ...
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... MBM29DS163TE/ rechecked even Start Read Byte ( Addr. VA Yes DQ Data Yes Read Byte ( Addr. VA Yes DQ Data Fail Pass “1” because DQ may change simultaneously with Data Polling Algorithm VA Address for programming ...
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... Addr Read DQ Addr. Read DQ Addr. Program/Erase Operation Not Complete.Write Reset Command *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling as DQ MBM29DS163TE/BE Start Bank addrerss being executed Embedded Algorithm ...
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... MBM29DS163TE/BE Increment PLSCNT PLSCNT Remove V Write Reset Command Device Failed * : byte mode Start Setup Sector Group Addr PLSCNT RESET Activate WE Pulse Time out 100 s ...
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... All protected sectors are unprotected All previously protected sectors are protected once again. Temporary Sector Group Unprotection Algorithm MBM29DS163TE/BE Start RESET Perform Erase or Program Operations RESET V IH Temporary Sector Group Unprotection Completed * ...
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... MBM29DS163TE/BE Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT 25? Yes Remove V from RESET ID Write Reset Command Device Failed * : byte mode Extended Sector Group Protection Algorithm 62 10 Start RESET V ID Wait Extended Sector Group Protection Entry? ...
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... FAST MODE ALGORITHM Increment Address Embedded Programming MBM29DS163TE/BE Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling Device No Verify Data? Yes No Last Address ? Yes Programming Completed (BA) XXXh/90h XXXh/F0h TM Algorithm for Fast Mode 10 Set Fast Mode In Fast Program Reset Fast Mode ...
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... Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of : MBM29DS163 T E DEVICE NUMBER/DESCRIPTION MBM29DS163 16 Mega-bit (2 M 1.8 V-only Read, Program, and Erase Valid Combinations MBM29DS163TE/ PACKAGE TYPE TN 48-Pin Thin Small Outline Package (TSOP) Normal Bend ...
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... FUJITSU LIMITED F48030S-c-6-7 C MBM29DS163TE/BE Note Values do not include resin protrusion. Resin protrusion and gate protrusion are +0.15(.006)Max(each side). Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. 48 Details of "A" part ...
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... MBM29DS163TE/BE (Continued) 48-pin plastic FBGA (BGA-48P-M11) 8.00 0.20(.315 .008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48011S-c-5 +0.15 +.006 1.05 .041 – 0.10 – .004 (Mounting height) 0.38 0.10(.015 .004) (Stand off) 6.00 0.20 (4.00(.157)) (.236 .008) H Dimensions in mm (inches) (5.60(.220)) 0.80(.031)TYP 48-ø ...
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... MBM29DS163TE/BE FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device ...