MBM29F002BC Fujitsu Media Devices, MBM29F002BC Datasheet - Page 3
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MBM29F002BC
Manufacturer Part Number
MBM29F002BC
Description
2M (256K X 8) BIT
Manufacturer
Fujitsu Media Devices
Datasheet
1.MBM29F002BC.pdf
(46 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBM29F002BC-70
Manufacturer:
FUJI/富士电机
Quantity:
20 000
MBM29F002TC
/MBM29F002BC
-55/-70/-90
-55/-70/-90
GENERAL DESCRIPTION
The MBM29F002TC/BC is a 2 M-bit, 5.0 V-Only Flash memory organized as 256K bytes of 8 bits each. The
MBM29F002TC/BC is offered in a 32-pin TSOP(I) and 32-pin PLCC packages. This device is designed to be
programmed in-system with the standard system 5.0 V V
supply. A 12.0 V V
is not required for program or
CC
PP
erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F002TC/BC offers access times between 55 ns and 90 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F002TC/BC is command set compatible with JEDEC standard E
2
PROMs. Commands are written
to the command register using standard microprocessor write timings. Register contents serve as input to an
internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
The MBM29F002TC/BC is programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase
is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm
which is an internal algorithm that automatically preprograms the array if it is not already programmed before
executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies
proper cell margin.
This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to
be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within 1
second (if already completely preprogrammed). The MBM29F002TC/BC is erased when shipped from the
factory.
The MBM29F002TC/BC device also features hardware sector protection. This feature will disable both program
and erase operations in any number of secotrs (0 through 6) .
Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of
time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.
The device features single 5.0 V power supply operation for both read and program functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
detector automatically
CC
inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of
DQ
, or by the Toggle Bit I feature on DQ
. Once the end of a program or erase cycle has been completed, the
7
6
device automatically resets to the read mode.
The MBM29F002TC/BC also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into
the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs
during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read
mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu's Flash technology combines years of EPROM and E
2
PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29F002TC/BC memory electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the
EPROM programming mechanism of hot electron injection.
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