MBM29LV080A Fujitsu Media Devices, MBM29LV080A Datasheet
MBM29LV080A
Available stocks
Related parts for MBM29LV080A
MBM29LV080A Summary of contents
Page 1
... Part No 3 Ordering Part No 3 Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) PACKAGE 40-pin plastic TSOP (I) (FPT-40P-M06) -70/-90/-12 2 PROMs MBM29LV080A +0.3 V -70 –0.3 V +0.6 V — –0 40-pin plastic TSOP (I) Marking Side Marking Side DS05-20870-4E (Continued) — — ...
Page 2
... MBM29LV080A -70/-90/-12 (Continued) • High performance 70 ns maximum access time • Sector erase architecture 16 sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase • Embedded Erase TM * Algorithms Automatically pre-programs and erases the chip or any sector TM • Embedded program ...
Page 3
... GENERAL DESCRIPTION The MBM29LV080A is a 16M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each. The 1M bytes of data is divided into 32 sectors of 64K bytes of flexible erase capability. The 8 bits of data will appear The MBM29LV080A is offered in a 40-pin TSOP (I) package. The device is designed to be programmed 7 in-system with the standard system 3 ...
Page 4
... MBM29LV080A -70/-90/-12 FLEXIBLE SECTOR-ERASE ARCHITECTURE • Sixteen 64K byte sectors • Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to 15). • Individual-sector or multiple-sector erase capability • Sector protection is user-definable. 4 FFFFFH 64 Kbytes EFFFFH 64 Kbytes DFFFFH 64 Kbytes CFFFFH ...
Page 5
... BLOCK DIAGRAM RY/BY Buffer State Control RESET Command Register CE OE Low V Detector MBM29LV080A RY/BY Erase Voltage Generator Program Voltage Generator Chip Enabl Output Enable Logic Y-Decoder STB Time for Address Program/Erase Latch X-Decoder -70/-90/- Input/Output Buffers STB ...
Page 6
... TSOP ( (Marking Side MBM29LV080A FPT-40P-M06 21 (Marking Side MBM29LV080A FPT-40P-M07 N. N. ...
Page 7
... RY/BY RESET Table 2 MBM29LV080A User Bus Operation Operation Auto-Select Manufacture Code (1) Auto-Select Device Code (1) Read (2) Standby Output Disable Write (Program/Erase) Enable Sector Protection (3), (4) Verify Sector Protection (3), (4) Temporary Sector Unprotection (5) Reset (Hardware)/Standby Legend ...
Page 8
... FUNCTIONAL DESCRIPTION Read Mode The MBM29LV080A has two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected. ...
Page 9
... IL identifier code MBM29LV080A = 38H. All identifiers for manufactures and device will exhibit odd parity with DQ defined as the parity bit. In order to read the proper device codes when executing the autoselect (See Tables 3.1 and 3.2.) ...
Page 10
... MBM29LV080A Sector A 19 Address SA0 0 SA1 0 SA2 0 SA3 0 SA4 0 SA5 0 SA6 0 SA7 0 SA8 1 SA9 1 SA10 1 SA11 1 SA12 1 SA13 1 SA14 1 SA15 1 10 -70/-90/-12 Table 4 Sector Address Tables ...
Page 11
... Temporary Sector Unprotection This feature allows temporary unprotection of previously protected sectors of the MBM29LV080A device in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. ...
Page 12
... MBM29LV080A Table 5 MBM29LV080A Standard Command Definitions Bus Command First Bus Write Sequence Write Cycle Cycles (Notes Req'd Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Read/Reset 1 XXXH F0H (Note 5) Read/Reset 3 XXXH AAH XXXH 55H XXXH F0H ...
Page 13
... The operation is initiated by writing the Autoselect command sequence into the command register. Fol- lowing the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address X001H returns the device code (MBM29LV080A = 38H). (See Tables 3.1 and 3.2.) All manufacturer and device codes will exhibit odd parity with the MSB (DQ Sector state (protection or unprotection) will be informed address X0002H ...
Page 14
... MBM29LV080A Byte Programming The device is programmed on a byte-by-byte basis. Programming is a four bus cycle operation. There are two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses are latched on the falling edge WE, whichever happens later and the data is latched on the rising edge WE, whichever happens first ...
Page 15
... To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing. MBM29LV080A is “1” (See Write Operation Status section Algorithm using typical command strings and bus operations ...
Page 16
... Extended Command (1) Fast Mode MBM29LV080A has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence by writing Fast mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in normal command. (Do not write erase command in this mode ...
Page 17
... Reading the byte address being programmed while in the erase-suspend program mode will indicate logic “1” at the DQ bit. However, successive reads from the erase-suspended sector will cause and DQ are reserve pins for future use Fujitsu internal use only. 4 MBM29LV080A Table 7 Hardware Sequence Flags Toggle 7 0 Toggle 1 Data ...
Page 18
... DQ 6 Toggle Bit I The MBM29LV080A also features the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ toggling between one and zero ...
Page 19
... When the devices are in the 2 erase mode, DQ toggles if this bit is read from the erasing sector. 2 MBM29LV080A , DQ is the only operating function of the device under 7 6 never stops toggling. Once the device has exceeded timing limits, the ...
Page 20
... RY/BY Ready/Busy Pin The MBM29LV080A provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation ...
Page 21
... Data Protection The MBM29LV080A is designed to offer protection against accidental erasure or programming caused by spu- rious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences ...
Page 22
... MBM29LV080A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Tstg Ambient Temperature with Power Applied Voltage with respect to Ground All pins except OE, RESET (Note 1) Power Supply Voltage (Note OE, and RESET 9 (Note 2) Notes: 1. Minimum DC voltage on input or l/O pins is 0.5 V. During voltage transitions, input or I/O pins may undershoot ...
Page 23
... MAXIMUM OVERSHOOT / UNDERSHOOT 0.6 V 0.5 V 2.0 V Figure 1 Maximum Undershoot Waveform 2.0 V Figure 2 Maximum Overshoot Waveform 1 14 Note : This waveform is applied for A Figure 3 Maximum Overshoot Waveform 2 MBM29LV080A and RESET. 9 -70/-90/-12 23 ...
Page 24
... MBM29LV080A DC CHARACTERISTICS Parameter Parameter Description Symbol I Input Leakage Current LI I Output Leakage Current OE, RESET Inputs Leakage 9 I LIT Current I V Active Current (Note 1) CC1 Active Current (Note 2) CC2 Current (Standby) CC3 CC V Current during Reset CC I CC4 (Standby, RESET) ...
Page 25
... AXQX OE, Whichever Occurs First — t RESET Pin Low to Read Mode READY Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV080A-70) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Device Under ...
Page 26
... Min. Min. Read Min. Toggle and Data Polling Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Typ. Typ. Min. Min. Min. Min. Min. Min. Min. MBM29LV080A Unit -70 -90 - 120 ...
Page 27
... Rise Time to V VIDR — t RESET Pulse Width RP Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. MBM29LV080A Description Max. (Note 2) Min. ID Min. -70/-90/-12 MBM29LV080A Unit -70 -90 - 500 500 500 ns 500 500 500 ns 27 ...
Page 28
... MBM29LV080A SWITCHING WAVEFORMS • Key to Switching Waveforms Addresses Outputs Figure 5.1 AC Waveforms for Read Operations 28 -70/-90/-12 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from from May Will Be Change Change from from “H” or “L”: ...
Page 29
... Addresses t RH RESET High-Z Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations MBM29LV080A t RC Addresses Stable t ACC Output Valid -70/-90/- ...
Page 30
... MBM29LV080A 3rd Bus Cycle Addresses XXXH GHWL A0H Data Notes address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device the output of the data written to the device. ...
Page 31
... D is the output of the data written to the device. OUT Figure indicates last two bus cycles out of four bus cycle sequence. Figure 7 AC Waveforms for Alternate CE Controlled Program Operations MBM29LV080A Data Polling ...
Page 32
... MBM29LV080A Addresses GHWL WE Data t VCS the sector address for Sector Erase. Addresses = Figure 8 AC Waveforms for Chip/Sector Erase Operations 32 -70/-90/-12 XXXH XXXH XXXH WPH AAH 55H 80H XXXH XXXH XXXH SA* ...
Page 33
... Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations CE t OEH WE t OES OE Data stops toggling. (The device has completed the Embedded operation.) 6 Figure 10 AC Waveforms for Toggle Bit I during Embedded Algorithm Operations MBM29LV080A Valid Data t WHWH1 ...
Page 34
... MBM29LV080A CE WE RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY 34 -70/-90/-12 The rising edge of the last WE signal READY Figure 12 RESET, RY/BY Timing Diagram Entire programming or erase operations t BUSY t RB ...
Page 35
... VLHT OESP VLHT WE t CSP CE Data t VLHT V CC SAX: Sector Address for initial sector SAY : Sector Address for next sector Figure 13 AC Waveforms for Sector Protection Timing Diagram MBM29LV080A WPP VLHT VLHT t OE -70/-90/-12 SAY 01H 35 ...
Page 36
... MBM29LV080A VCS t RESET VLHT t VIDR Add Data SPAX: Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 250 s (min.) Figure 14 Extended Sector Protection Timing Diagram 36 -70/-90/-12 SPAX TIME-OUT 60H 60H SPAX SPAY ...
Page 37
... Erasing WE Erase Erase Suspend Read Toggle DQ and with OE Note read from the erase-suspended sector. 2 MBM29LV080A t Program or Erase Command Sequence VLHT Unprotection period Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure -70/-90/-12 t VLHT ...
Page 38
... MBM29LV080A FLOW CHART EMBEDDED ALGORITHM Increment Address 38 -70/-90/-12 Start Write Program Command Sequence (See below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command): XXXH/AAH XXXH/55H XXXH/A0H Program Address/Program Data TM Figure 17 Embedded Program Algorithm Embeded Program Algorithm ...
Page 39
... EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command): XXXH/AAH XXXH/55H XXXH/80H XXXH/AAH XXXH/55H XXXH/10H Figure 18 Embedded Erase MBM29LV080A Start Write Erase Command Sequence (See below) Data Polling Embeded Program Algorithm No in progress Data = FFH ? Yes Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence ...
Page 40
... MBM29LV080A *: DQ is rechecked even -70/-90/-12 Start Read Byte ( Addr Yes DQ = Data Yes Read Byte ( Addr Yes DQ = Data Fail Pass = “1” because DQ may change simultaneously with Figure 19 Data Polling Algorithm VA = Address for programming ...
Page 41
... No *1: Reset toggle bit twice to determine whether or not it is toggle. *2: Recheck toggle bit because it may stop toggle as DQ Figure 20 Toggle Bit Algorithm MBM29LV080A Start Read Read Toggle Bit = Toggle ? Yes Yes *1, *2 Read ...
Page 42
... MBM29LV080A Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed 42 -70/-90/-12 Start Setup Sector Addr PLSCNT = Activate WE Pulse Time out 100 should remain V 9 Read from Sector ( Addr ...
Page 43
... All protected sectors are unprotected. *2: All previously protected sectors are protected once again. Figure 22 Temporary Sector Unprotection Algorithm MBM29LV080A Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed *2 -70/-90/-12 43 ...
Page 44
... MBM29LV080A Device is Operating in Temporary Secto Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed Figure 23 Extended Sector Protection Algorithm 44 -70/-90/-12 Start RESET = V ID Wait Extended Sector Protection Entry? Yes To Setup Sector Protection Write XXXH/60H PLSCNT = 1 ...
Page 45
... FAST MODE ALGORITHM No Increment Address Figure 24 Embedded Program MBM29LV080A Start XXXH/AAH XXXH/55H XXXH/20H XXXH/A0H Program Address/Program Data Data Polling Device No Verify Data? Yes Last Address ? Yes Programming Completed XXXH/90H XXXH/F0H TM Algorithm for Fast Mode -70/-90/-12 Set Fast Mode In Fast Program Reset Fast Mode ...
Page 46
... MBM29LV080A ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Byte Programming Time Chip Programming Time Erase/Program Cycle TSOP (I) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz A 46 ...
Page 47
... Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29LV080 A -70 Part number MBM29LV080A-70PTV MBM29LV080A-90PTV MBM29LV080A-12PTV MBM29LV080A-70PTR MBM29LV080A-90PTR MBM29LV080A-12PTR MBM29LV080A PTN PACKAGE TYPE PTN = 40-pin Thin Small Outline Package (TSOP (I)) Standard Pinout PTR = 40-pin Thin Small Outline Package (TSOP (I)) Reverse Pinout SPEED OPTION See Product Selector Guide ...
Page 48
... MBM29LV080A PACKAGE DIMENSIONS 40-pin plastic TSOP(I) (FPT-40P-M06) LEAD No. 1 INDEX 20 0.15±0.05 (.006±.002) 20.00±0.20 (.787±.008) 18.40±0.20 (.724±.008) 19.00±0.20 (.748±.008) 1994 FUJITSU LIMITED F40007S-1C-1 C 40-pin plastic TSOP(I) (FPT-40P-M07) LEAD No. 1 INDEX 20 0.15±0.05 (.006±.002) ...
Page 49
... MBM29LV080A -70/-90/-12 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3386 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. ...