MBM29PL12LM Fujitsu Media Devices, MBM29PL12LM Datasheet
MBM29PL12LM
Available stocks
Related parts for MBM29PL12LM
MBM29PL12LM Summary of contents
Page 1
... MBM29PL12LM ■ DESCRIPTION The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by 16 bits. The MBM29PL12LM is offered in 58-pin TSOP (1) and 80-ball FBGA. The device is designed to be programmed in-system with the standard 3 erase operations. The devices can also be reprogrammed in standard EPROM programmers. ...
Page 2
... Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29PL12LM is programmed by executing the program command sequence. This will invoke the Em- bedded Program Algorithm TM which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin ...
Page 3
... Temporary sector group unprotection Temporary sector group unprotection via the RESET pin This feature allows code changes in previously locked sectors • In accordance with CFI (Common Flash Memory Interface Embedded Erase TM and Embedded Program MBM29PL12LM TM are trademarks of Advanced Micro Devices, Inc ...
Page 4
... MBM29PL12LM ■ PIN ASSIGNMENTS N. RESET A 21 WP/ACC RY/ N.C. N. N.C. N. N.C. N. N. N. 56-pin TSOP (1) (Top View) 1 (Marking Side ...
Page 5
... WE WP/ACC RESET BYTE RY/ CCQ V SS N.C. MBM29PL12LM Pin Configuration Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Hardware Write Protection/Program Acceleration Hardware Reset Pin/Temporary Sector Group Unprotection Select 8-bit or 16-bit mode Ready/Busy Output Device Power Supply Output Voltage ...
Page 6
... MBM29PL12LM ■ BLOCK DIAGRAM CCQ WE State Control RESET / WP ACC Command BYTE Register ■ LOGIC SYMBOL 6 10 Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic STB Timer for Address / Program Erase ...
Page 7
... DEVICE BUS OPERATION MBM29PL12LM User Bus Operations (Word Mode : BYTE = V Operation Standby Autoselect Manufacture Code Autoselect Device Code* Read Output Disable Write (Program/Erase) Enable Sector Group Protection* 2 Temporary Sector Group Unprotection Reset (Hardware) Sector Write Protection* 3 Legend : ...
Page 8
... MBM29PL12LM MBM29PL12LM User Bus Operations (Byte Mode : BYTE = V Operation Standby Autoselect Manufacture Code Autoselect Device Code* Read Output Disable Write (Erase) Enable Sector Group Protection* Temporary Sector Group Unprotection Reset (Hardware) Sector Write Protection* 3 Legend : Hi-Z = High- ...
Page 9
... MBM29PL12LM Standard Command Definitions* Bus Command Write Write Cycle Sequence Cycles Req'd Word/ Reset XXXh F0h Byte Word Reset AAAh Byte Word Autoselect 3 (Device ID) Byte AAAh Program 4 Word Word Chip Erase 6 AAAh Byte Word Sector Erase 6 AAAh Byte Program/Erase Suspend* ...
Page 10
... Legend : Address bits Sector Address (SA) and Sector Group Address (SGA). Bus operations are defined in “MBM29PL12LM User Bus Operations (Word Mode : BYTE = V and “MBM29PL12LM User Bus Operations (Byte Mode : BYTE = Address of the memory location to be read Address of the memory location to be programmed. Addresses are latched on the falling edge of the write pulse ...
Page 11
... Codes at the address of 0Eh ( at Byte mode, 1Ch ), as well as at 0Fh ( at Byte mode, 1Eh ). *3 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses Fix, designate SGA as A6, A3, A2, A1 last write command . MBM29PL12LM ...
Page 12
... SA26 SA27 SA28 SA29 SA30 Sector Address Table (MBM29PL12LM) Sector size (Kbytes Address Range Kwords 64/32 000000h to 00FFFFh 64/32 010000h to 01FFFFh 64/32 020000h to 02FFFFh 64/32 030000h to 03FFFFh ...
Page 13
... MBM29PL12LM 10 (×16) Address Range 0F8000h to 0FFFFFh 100000h to 107FFFh 108000h to 10FFFFh 110000h to 117FFFh 118000h to 11FFFFh 120000h to 127FFFh 128000h to 12FFFFh 130000h to 137FFFh 138000h to 13FFFFh 140000h to 147FFFh 148000h to 14FFFFh 150000h to 157FFFh 158000h to 15FFFFh ...
Page 14
... MBM29PL12LM Sector SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 SA71 SA72 SA73 SA74 ...
Page 15
... MBM29PL12LM 10 (×16) Address Range 2F8000h to 2FFFFFh 300000h to 307FFFh 308000h to 30FFFFh 310000h to 317FFFh 318000h to 31FFFFh 320000h to 327FFFh 328000h to 32FFFFh 330000h to 337FFFh 338000h to 33FFFFh 340000h to 347FFFh 348000h to 34FFFFh 350000h to 357FFFh 358000h to 35FFFFh ...
Page 16
... MBM29PL12LM Sector SA125 SA126 SA127 SA128 SA129 SA130 SA131 SA132 SA133 SA134 SA135 SA136 ...
Page 17
... B60000h to B6FFFFh 1 1 64/32 B70000h to B7FFFFh 0 0 64/32 B80000h to B8FFFFh 0 1 64/32 B90000h to B9FFFFh MBM29PL12LM 10 (×16) Address Range 4E0000h to 4E7FFFh 4E8000h to 4EFFFFh 4F0000h to 4F7FFFh 4F8000h to 4FFFFFh 500000h to 507FFFh 508000h to 50FFFFh 510000h to 517FFFh 518000h to 51FFFFh 520000h to 527FFFh 528000h to 52FFFFh 530000h to 537FFFh 538000h to 53FFFFh 540000h to 547FFFh ...
Page 18
... MBM29PL12LM Sector SA186 SA187 SA188 SA189 SA190 SA191 SA192 SA193 SA194 SA195 SA196 SA197 ...
Page 19
... F20000h to F2FFFFh 1 1 64/32 F30000h to F3FFFFh 0 0 64/32 F40000h to F4FFFFh 0 1 64/32 F50000h to F5FFFFh MBM29PL12LM 10 (×16) Address Range 6C0000h to 6C7FFFh 6C8000h to 6CFFFFh 6D0000h to 6D7FFFh 6D8000h to 6DFFFFh 6E0000h to 6E7FFFh 6E8000h to 6EFFFFh 6F0000h to 6F7FFFh 6F8000h to 6FFFFFh 700000h to 707FFFh 708000h to 70FFFFh 710000h to 717FFFh 718000h to 71FFFFh 720000h to 727FFFh ...
Page 20
... MBM29PL12LM (Continued) Sector SA246 SA247 SA248 SA249 SA250 SA251 SA252 SA253 SA254 SA255 Note : The address range is A ...
Page 21
... Sector Group Address Table (MBM29PL12LM) Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 ...
Page 22
... MBM29PL12LM (Continued) Sector Group SGA35 1 0 SGA36 1 0 SGA37 1 0 SGA38 1 0 SGA39 1 0 SGA40 1 0 SGA41 1 0 SGA42 1 0 SGA43 1 0 SGA44 1 0 SGA45 1 0 SGA46 1 0 SGA47 1 0 SGA48 1 0 SGA49 1 0 SGA50 1 0 SGA51 1 1 SGA52 ...
Page 23
... Erase Block Region 1 Information 2Fh 0020h 30h 0000h 31h 003Eh 32h 0000h Erase Block Region 2 Information 33h 0000h 34h 0001h MBM29PL12LM Description Min (write/erase 1V/bit 100 mV/bit 0 Max (write/erase 1V/bit 100 mV/bit 0 Min voltage (00h = no V ...
Page 24
... MBM29PL12LM (Continued 35h 0000h 36h 0000h 37h 0000h 38h 0000h 39h 0000h 3Ah 0000h 3Bh 0000h 3Ch 0000h 40h 0050h 41h 0052h 42h 0049h 43h 0031h 44h 0033h 45h 0008h 46h 0002h 47h 0001h 48h 0001h ...
Page 25
... The manufacturer and device codes may also be read via the command register, for instances when the device is erased or programmed in a system without access to high voltage on the A illustrated in “MBM29PL12LM Standard Command Definitions” in ■DEVICE BUS OPERATION. Refer to Au- toselect Command section. In Word mode, a read cycle from address 00h returns the manufacturer’s code (Fujitsu = 04h read cycle at address 01h outputs device code ...
Page 26
... Group Address Table (MBM29PL12LM)” in ■DEVICE BUS OPER- ATION defines the sector address for each of the 70 individual sectors, and “Sector Group Address Table (MBM29PL12LM)” in ■DEVICE BUS OPERATION defines the sector group address for each of the twenty-four (24) individual group sectors ...
Page 27
... Removing V from the WP/ACC pin returns the device to normal operation. Do not remove V ACC ACC pin while programming. See “Accelerated Program Timing Diagram” in ■TIMING DIAGRAM. V CCQ V determines the MBM29PL12LM voltage output. V CCQ voltage. MBM29PL12LM from V . The RESET pin has a pulse requirement IL IH ” ...
Page 28
... Device operations are selected by writing specific address and data sequences into the command register. “MBM29PL12LM Standard Command Definitions” in ■DEVICE BUS OPERATION shows the valid register command sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are valid only while the Sector Erase operation is in progress ...
Page 29
... The Data polling techniques described in “Data Polling Algorithm” in ■FLOW CHART should be used while monitoring the last address location loaded into the write buffer. In addition not neccessary to specify an address in Toggle Bit techniques described in “Toggle Bit Algorithm” in ■FLOW CHART. The automatic pro- MBM29PL12LM Algorithm” in ■FLOW CHART illustrates the Em should be 0h ...
Page 30
... Write data other than the “Program Buffer to Flash" command after the specified number of “data load” cycles. A “Write-to-Buffer-Abort Reset” command sequence must be written to the device to return to read mode. (See “MBM29PL12LM Standard Command Definitions” in ■DEVICE BUS OPERATION for details on this command sequence.) Chip Erase Chip erase bus cycle operation. It begins two “ ...
Page 31
... DQ will stop toggling. The user must use the address 6 and DQ to determine if the erase operation has been suspended. Further toggle. See the section Algorithm for Fast Mode” in ■FLOW CHART.) TM during Fast Mode. IH MBM29PL12LM ...
Page 32
... MBM29PL12LM Extended Sector Group Protection In addition to normal sector group protection, the device has Extended Sector Group Protection as extended function. This function enables protection of the sector group by forcing V sequence. Unlike conventional procedures not necessary to force V The only RESET pin requires V requires V on RESET pin ...
Page 33
... OE, set the sector address in the HiddenROM region ( and the sector address ) specify ( the protect setting is completed. “0” will appear 0 MBM29PL12LM are all ( and write the , ...
Page 34
... MBM29PL12LM Take note that other sector groups will be affected if an address other than those for the HiddenROM region is selected for the sector group address. Pay close attention that once it is protected, protection CANNOT BE CANCELLED. Write Operation Status Detailed in “Hardware Sequence Flags” are all the status flags which can determine the status of the device for current mode operation. When checking Hardware Sequence Flags during program operations, it should be checked 4 µ ...
Page 35
... If 7 toggling between 1 and 0. Once the Embedded Program or Erase Algorithm 6 to toggle. See “Toggle Bit l Timing Diagram during Embedded 6 MBM29PL12LM ) is shown in “Data Polling 7 ) may change may still be invalid. The valid data ...
Page 36
... Data Polling is the only operating function of the device under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in “MBM29PL12LM User Bus Operations (Word Mode : BYTE = V )” ...
Page 37
... Diagram” and “RESET Timing Diagram ( During Embedded Algorithms )” in “■TIMING DIAGRAM” for a detailed timing diagram. The RY/BY pin is pulled high in standby mode. Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to V MBM29PL12LM is high (see the section ...
Page 38
... MBM29PL12LM Word/Byte Configuration BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the device. When this pin is driven high, the device operates in the word (16-bit) mode. Data is read and programmed at DQ low, the device operates in byte (8-bit) mode. In this mode, DQ ...
Page 39
... Symbol Tstg OUT ACC +2.0 V for periods Symbol CCQ = GND = 0V. SS MBM29PL12LM Rating Unit Min Max –55 +125 °C –20 +85 °C –0 –0.5 +4.0 V –0.5 +12.5 V –0.5 +12.5 V +0.5 V. During voltage CC to –0.2 V for SS – ...
Page 40
... MBM29PL12LM ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V – × 0 +14.0 V +12 +0 Note: This waveform is applied for Maximum Undershoot Waveform Maximum Overshoot Waveform OE, RESET, and WP/ACC. 9 Maximum Overshoot Waveform ...
Page 41
... 3.6 V ACC 3 3 4.0 mA Min –2.0 mA Min — LKO MBM29PL12LM Value Min Typ Max –2.0 — +2.0 –1.0 — +1.0 Max –1.0 — +1.0 — — 35 — — — — — ...
Page 42
... MBM29PL12LM *1 : The l current listed includes both the DC operating current and the frequency dependent component peaks when both V and CCQ * active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress Automatic sleep mode enables the low power mode when address remain stable for t ...
Page 43
... EHQZ DF — t OEH t t GHQZ AXQX OH — t READY 3.3 V Diode = 1N3064 2.7 kΩ or Equivalent 6.2 kΩ Test Conditions MBM29PL12LM Value* Condition 10 Unit Min Max ⎯ — 100 ⎯ 100 ⎯ 100 IL ⎯ — ⎯ 30 ...
Page 44
... MBM29PL12LM • Write (Erase/Program) Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time Data Hold Time Output Enable Setup Time ...
Page 45
... RESET High Time Before Read Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time *1 : This does not include the preprogramming time This timing is for Sector Group Protection operation This timing is for Accelerated Program operation. MBM29PL12LM Symbol JEDEC Standard Min — t 100 WPP — ...
Page 46
... MBM29PL12LM ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Programming Time Effective Page Programming Time (Write Buffer Programming) Chip Programming Time Absolute Maximum Programming Time (16 words) Erase/Program Cycle ■ TSOP (1) PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance ...
Page 47
... from “H” or “L” Changing Any Change State Permitted Unknown Does Not Center Line is Apply High- Impedance “Off” State t RC Address Stable t ACC OEH t CE Read Operation Timing Diagram MBM29PL12LM High-Z Output Valid 10 47 ...
Page 48
... MBM29PL12LM Data Address RESET Data 48 10 Address Valid PRC t ACC OEH OE t PACC t OH High-Z Da Page Read Operation Timing Diagram t RC Address Stable t ACC High-Z Hardware Reset/Read Operation Timing Diagram ...
Page 49
... D is the output of the data written to the device. OUT • Figure indicates the last two bus cycles out of four bus cycle sequence. Alternate WE Controlled Program Operation Timing Diagram MBM29PL12LM Data Polling WHWH1 ...
Page 50
... MBM29PL12LM Address Data Notes : • address of the memory location to be programmed. • data to be programmed at word address. • the output of the complement of the data written to the device. 7 • the output of the data written to the device. OUT • ...
Page 51
... GHWL AAh Data RY/BY t VCS the sector address for Sector Erase. Address = 555h (Word), AAAh (Byte) for Chip Erase. Chip/Sector Erase Operation Timing Diagram MBM29PL12LM 555h 555h 2AAh t AH 55h 80h AAh 55h 10 SA* SA* t TOW 10h for Chip Erase ...
Page 52
... MBM29PL12LM XXXh Address SPD B0h Data RY/BY Erase Suspend Operation Timing Diagram ...
Page 53
... Data BUSY RY/ Valid Data (The device has completed the Embedded operation.) 7 Note : When checking Hardware Sequence Flags during program operations, it should be checked 4 µs after issuing program command. Data Polling during Embedded Algorithm Operation Timing Diagram MBM29PL12LM ...
Page 54
... MBM29PL12LM Address µ /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). 6 Note : When checking Hardware Sequence Flags during program operations, it should be checked 4 µs after issuing program command. Toggle Bit Timing Diagram during Embedded Algorithm Operations ...
Page 55
... CE WE RY/BY RY/BY Timing Diagram during Program/Erase Operation Timing Diagram CE, OE RESET RESET Timing Diagram (Not during Embedded Algorithms) MBM29PL12LM Rising edge of the last WE signal Entire programming or erase operations t BUSY READY 10 55 ...
Page 56
... MBM29PL12LM WE RESET RY/BY RESET Timing Diagram (During Embedded Algorithms READY t RB ...
Page 57
... VLHT VLHT WE CE Data t VCS V CC SGAX : Sector Group Address to be protected SGAY : Next Sector Group Address to be protected Sector Group Protection Timing Diagram t VLHT t WPP t OESP t CSP MBM29PL12LM 10 SGAY t VLHT 01h ...
Page 58
... MBM29PL12LM VIDR VCS V ID RESET CE WE RY/BY Temporary Sector Group Unprotection Timing Diagram Program or Erase Command Sequence VLHT Unprotection period t VLHT VLHT ...
Page 59
... Data 60h SGAX: Sector Group Address to be protected SGAY : Next Sector Group Address to be protected TIME-OUT : Time-Out window = 250 µs (Min) Extended Sector Group Protection Timing Diagram MBM29PL12LM SGAX TIME-OUT 40h 60h 10 SGAX SGAY 60h 01h ...
Page 60
... MBM29PL12LM VCS V ACC ACC VACCR t Program Command Sequence VLHT Acceleration period Accelerated Program Timing Diagram t VLHT t VLHT ...
Page 61
... FLOW CHART EMBEDDED ALGORITHMS Increment Address Note : The sequence is applied for Word ( ×16 ) mode. The addresses differ from Byte ( × mode. MBM29PL12LM Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command): ...
Page 62
... MBM29PL12LM EMBEDDED ALGORITHMS Chip Erase Command Sequence Note : The sequence is applied for Word ( ×16 ) mode. The addresses differ from Byte ( × mode Start Write Erase Command Sequence (See Below) Data Polling No Data = FFh ? Yes Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence ...
Page 63
... Addr Read Byte (DQ Addr rechecked even “1” because MBM29PL12LM Start Valid address for programming Any of the sector addresses within the sector being erased during sector erase or multiple sector Yes = Data? 7 erases operation ...
Page 64
... MBM29PL12LM *1 : Read Toggle bit twice to determine whether it is toggling Recheck Toggle bit because it may stop toggling Start Wait 4 µs after issuing Program Command *1 Read Addr. = "H" or "L" *1 Read Addr. = "H" or "L" ...
Page 65
... Increment PLSCNT No PLSCNT = 25? Yes Remove V from Write Reset Command Device Failed in Byte ( × mode Sector Group Protection Algorithm MBM29PL12LM Start Setup Sector Group Addr PLSCNT = RESET = V ...
Page 66
... MBM29PL12LM *1 : All protected sector groups are unprotected All previously protected sector groups are protected. Temporary Sector Group Unprotection Algorithm 66 10 Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector Group Unprotection Completed *2 ...
Page 67
... PLSCNT = 25? Yes Remove V from RESET ID Protection Other Sector Write Reset Command Remove V Device Failed Write Reset Command Sector Group Protection Extended Sector Group Protection Algorithm MBM29PL12LM Start RESET = V ID Wait to 4 µs Protection Entry? Yes PLSCNT = ...
Page 68
... MBM29PL12LM FAST MODE ALGORITHM Increment Address Notes : • The sequence is applied for Word ( ×16 ) mode. • The addresses differ from Byte ( × mode. Embedded Program 68 10 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address ...
Page 69
... V-only Read, Program, and Erase Package Access Time (FPT-56P-M01) (Normal Bend) 80-ball,plastic FBGA (BGA-80P-M02) PCN PACKAGE TYPE PCN = 56-Pin Thin Small Outline Package (TSOP(1)) Standard Pinout PBT = 80-ball Fine Pitch ball Grid Array Package (FBGA) SPEED OPTION 10 = 100 ns access time MBM29PL12LM Remarks 100 ns 100 ...
Page 70
... MBM29PL12LM ■ PACKAGE DIMENSIONS 56-pin plastic TSOP(1) (FPT-56P-M01) LEAD No. 1 INDEX 28 20.00±0.20(.787±.008 18.40±0.10(.724±.004) 0.08(.003) 2002 FUJITSU LIMITED F56001S-c-4 Note Resin protrusion. (Each side : +0.15 (.006) Max) . Note These dimensions do not include resin protrusion. ...
Page 71
... FBGA (BGA-80P-M02) 13.00 ± 0.10(.512 ± .004) INDEX AREA 2003 FUJITSU LIMITED B80002S-c-1-1 C MBM29PL12LM +0.12 1.08 –0.13 (Mounting height) +.005 .043 –.005 0.38 ± 0.10 (Stand off) (.015 ± .004) A 10.00 ± 0.10 (.394 ± .004) 0.10(.004 80- ø 0.45 ± 0.05 (80- ø .018 ± ...
Page 72
... MBM29PL12LM 10 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94088-3470, U ...