TIM4450-60SL Toshiba Semiconductor, TIM4450-60SL Datasheet
TIM4450-60SL
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TIM4450-60SL Summary of contents
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... The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM4450-60SL HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET ...
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... Drain Current Total Power Dissipation (Tc Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) 4 – – – – C1 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM4450-60SL SYMBOL ...
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... RF PERFORMANCE Output Power (P V =10V 13. =38.5dBm 4.4 Output Power(P 51 freq.=5.0GHz 50 V =10V DS I set 9. TIM4450-60SL ) vs. Frequency out 4.5 4.6 4.7 4.8 Frequency(GHz) ) vs. Input Power(Pi out Pout add 36 38 Pin(dBm) 3 4.9 5 ...
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... Power Dissipation(PT) vs. Case Temperature(Tc) 220 180 140 100 IM3 vs. Power Characteristics -10 V =10V DS I set 9.5A DS freq.=5.0GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM4450-60SL 80 120 Tc 200 160 40 42 ...