TIM4450-8SL Toshiba Semiconductor, TIM4450-8SL Datasheet
TIM4450-8SL
Manufacturer Part Number
TIM4450-8SL
Description
MICROWAVE POWER GaAs FET
Manufacturer
Toshiba Semiconductor
Datasheet
1.TIM4450-8SL.pdf
(2 pages)
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Company:
Part Number:
TIM4450-8SL
Manufacturer:
Toshiba
Quantity:
1 400
Part Number:
TIM4450-8SL
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
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MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
n HIGH POWERT
n HIGH GAIN
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
Channel Temperature Rise
Gain Flatness
Drain Current
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
3
Distortion
NOTE : Two Tone Test, Po=28.5dBm (Single Carrier Level)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
rd
P1dB=39.5dBm at 4.4GHz to 5.0GHz
G1dB=9.5dB at 4.4GHz to 5.0GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
IDS2
I
I
th(c-c)
IM3
Gm
GSoff
DS1
DSS
GSO
Tch
1dB
1dB
add
G
V
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
DS
GS
f= 4.4 to 5.0GHz
= 3.0A
= 30mA
= -100 A
CONDITION
CONDITION
= 3V
=
=
= 0V
X I
VDS= 10V
3V
3V
NOTE
n BROAD BAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
DS
MICROWAVE POWER GaAs FET
X R
PRELIMINARY
th(c-c)
TIM4450-8SL
UNIT
UNIT
dBm
dBc
mS
C/W
dB
dB
%
A
A
V
A
V
C
MIN. TYP. MAX.
MIN.
38.5
-1.0
-42
8.5
-5
TYP. MAX.
39.5
1800
-45
-2.5
9.5
2.2
2.2
36
5.2
2.5
Jun. 2002
2.6
2.6
-4.0
80
0.6
7.0
3.8
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TIM4450-8SL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM4450-8SL PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ...
Page 2
... Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11D1B) 4-C1.2 ‚ HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM4450-8SL SYMBOL ...