TIM4450-8SL Toshiba Semiconductor, TIM4450-8SL Datasheet - Page 2

• Manufacturer Part Number: TIM4450-8SL
• Description: MICROWAVE POWER GaAs FET
• Manufacturer: Toshiba Semiconductor

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
PACKAGE OUTLINE (2-11D1B)
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 C)
Channel Temperature
Storage Temperature
4-C1.2
at 260 C.
Soldering iron should be grounded and the operating time should not exceed 10 seconds
‚
CHARACTERISTICS
•
ƒ
11.0 MAX.
17 0.3
21 0.2
12
0.6 0.15
TIM4450-8SL
2
SYMBOL
V
V
T
T
I
‚
P
DS
DS
GS
stg
ch
T
UNIT
W
V
V
A
C
C
Unit in mm
•
‚
ƒ
-65 to +175
RATING
Gate
Source
Drain
37.5
175
7.0
15
-5