MX28F2000P Macronix International, MX28F2000P Datasheet - Page 13

• Manufacturer Part Number: MX28F2000P
• Description: 2M-BIT [256K x 8] CMOS FLASH MEMORY
• Manufacturer: Macronix International

COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
DC CHARACTERISTICS
NOTES:
1. VCC must be applied before VPP and removed after VPP.
2. VPP must not exceed 14V including overshoot.
3. An influence may be had upon device reliability if the device
4. Do not alter VPP either VIL to 12V or 12V to VIL when
P/N: PM0380
is installed or removed while VPP=12V.
CE=VIL.
SYMBOL
ILI
ILO
ISB1
ISB2
ICC1 (Read)
ICC2
ICC3 (Program)
ICC4 (Erase)
ICC5 (Program Verify)
ICC6 (Erase Verify)
IPP1 (Read)
IPP2 (Program)
IPP3 (Erase)
IPP4 (Program Verify)
IPP5 (Erase Verify)
VIL
VIH
VOL
VOH
PARAMETER
Input Leakage Current
Output Leakage Current
Standby VCC current
Operating VCC Current
VPP Current
Input Voltage
Output Voltage
TA = 0
o
C to 70
o
C, VCC = 5V ± 10%, VPP = 12.0V ± 5%
MIN.
-0.3 (Note 5)
2.4
2.4
13
5. VIL min. = -0.6V for pulse width < 20ns.
6. If VIH is over the specified maximum value, programming
7. All currents are in RMS unless otherwise noted.(Sampled, not
TYP
1
operation cannot be guranteed.
100% tested.)
MAX.
100
30
50
50
50
50
50
50
0.8
VCC+0.3V V
0.45
10
10
1
50
50
100
50
(Note 6)
MX28F2000P
UNIT
uA
uA
mA
uA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
mA
V
V
V
CONDITIONS
VIN=GND to VCC
VOUT=GND to VCC
CE=VIH
CE=VCC ± 0.3V
IOUT=0mA, f=1MHz
IOUT=0mA, F=11MHz
In Programming
In Erase
In Program Verify
In Erase Verify
VPP=12.6V
In Programming
In Erase
In Program Verify
In Erase Verify
IOL=2.1mA
IOH=-400uA
REV. 1.5, OCT 29, 1998