MX29F001T Macronix, MX29F001T Datasheet - Page 16

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MX29F001T

Manufacturer Part Number
MX29F001T
Description
1M bit CMOS Flash Memory
Manufacturer
Macronix
Datasheet

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NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
AC CHARACTERISTICS
P/N: PM0515
SYMBOL PARAMETER
tOES
tCWC
tCEP
tCEPH1
tCEPH2
tAS
tAH
tDS
tDH
tCESC
tDF
tAETC
tAETB
tAVT
tBAL
tCH
tCS
tVLHT
tOESP
tWPP
tWPP2
Total erase time in auto sector erase
OE setup time
Command programming cycle
WE programming pulse width
WE programming pulse width High
WE programming pulse width High
Address setup time
Address hold time
Data setup time
Data hold time
CE setup time before command write
Output disable time (Note 1)
Total erase time in auto chip erase
Total programming time in auto verify
Sector address load time
CE Hold Time
CE setup to WE going low
Voltage Transition Time
OE Setup Time to WE Active
Write pulse width for chip protect
Write pulse width for chip unprotect
VCC = 5V ± 10% (VCC = 5V ± 5% for 29F001T/B-55)
0
0
100
4
29F001T/B-70
MIN.
70
45
20
20
0
45
30
0
3(TYP.) 24
1(TYP.) 8
7
0
0
4
10
12
16
MAX. MIN.
30
210
0
20
20
0
45
45
0
0
3(TYP.) 24
1(TYP.) 8
7
100
0
0
4
4
12
90
45
10
29F001T/B-90
MX29F001T/B
MAX.
40
210
MIN.
0
100
4
0
120
50
20
20
0
50
50
0
3(TYP.)
1(TYP.)
7
0
0
4
10
12
29F001T/B-12
REV. 2.5,NOV. 20, 2002
MAX. UNIT
40
24
8
210
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
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us
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