sch2822 Sanyo Semiconductor Corporation, sch2822 Datasheet

no-image

sch2822

Manufacturer Part Number
sch2822
Description
Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENA0668
SCH2822
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Marking : QX
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
[SBD]
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Short reverse recovery time.
Low forward voltage.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Symbol
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
V RRM
V RSM
V GSS
V DSS
I FSM
Tstg
Tstg
I DP
Tch
P D
I D
I O
Tj
SANYO Semiconductors
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
50Hz sine wave, 1 cycle
SCH2822
Conditions
2
✕0.8mm) 1unit
DATA SHEET
22807PE TI IM TC-00000508
Ratings
--55 to +125
--55 to +125
--55 to +125
±10
150
--20
0.6
0.5
15
15
--1
--4
No. A0668-1/6
3
Unit
°C
°C
°C
°C
W
V
V
A
A
V
V
A
A

Related parts for sch2822

sch2822 Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SCH2822 SANYO Semiconductors MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...

Page 2

... Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 SCH2822 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--20V =0V I GSS V GS =±8V = (off =--10V -1mA  yfs  =--10V -0. (on =--0 ...

Page 3

... Drain-to-Source Voltage (on 1000 900 800 700 --0. --0.3A 600 500 400 300 200 100 0 0 --2 --4 Gate-to-Source Voltage SCH2822 t rr Test Circuit [SBD] Duty≤10% 50Ω V OUT 10µs [MOSFET] --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --0.6 --0.7 --0.8 --0.9 --1.0 IT03501 [MOSFET] 1000 Ta=25 ° C --6 --8 ...

Page 4

... Drain Current --4 --10V --1A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 0.2 0.4 0.6 0.8 1.0 Total Gate Charge 0.8 0.6 0.4 0 100 Ambient Temperature °C SCH2822 [MOSFET] -- --10V --1 --0 --0. --0.4 --0.5 --1.0 IT03505 [MOSFET 100 --2 ...

Page 5

... Rectangular wave 0. 0.1 0.2 0.3 0.4 Average Output Current FSM -- t 7 Current waveform 50Hz sine wave 0. 0 Time SCH2822 [SBD 10000 1000 100 1.0 0.5 0.6 0 IT07927 ...

Page 6

... Note on usage : Since the SCH2822 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

Related keywords