ipd06n03lzg Infineon Technologies Corporation, ipd06n03lzg Datasheet - Page 3

• Manufacturer Part Number: ipd06n03lzg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.7
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DS
GS
DD
GS
R
=25 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 5 V
=0 to 5 V
=15 V, V
=0 V, I
F
F
G
DS
=50 A,
=I
D
=2.7 Ω
GS
GS
=25 A,
=15 V,
S
=10 V,
=0 V
,
IPS06N03LZ G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
2093
0.92
typ.
800
7.2
4.6
6.7
3.3
4.6
8.0
3.2
98
10
29
17
15
17
-
-
-
IPD06N03LZ G
IPU06N03LZ G
max.
2783
1064
147
350
6.9
9.0
4.5
6.9
1.2
14
11
43
11
22
20
23
50
10
-
Unit
pF
ns
nC
V
nC
A
V
nC
2008-04-14