ipd06n03lzg Infineon Technologies Corporation, ipd06n03lzg Datasheet - Page 6

• Manufacturer Part Number: ipd06n03lzg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.7
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
4
3
2
DS
=f(T
9
8
7
6
5
4
3
2
1
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=30 A; V
10
20
GS
98 %
V
Coss
=10 V
T
Ciss
DS
Crss
15
j
60
[°C]
typ
[V]
2 %
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
D
j
GS
-20
IPS06N03LZ G
=V
0.5
175 °C
DS
20
40 µA
V
T
SD
j
1.0
60
[°C]
25 °C, 98%
[V]
400 µA
100
IPD06N03LZ G
IPU06N03LZ G
25 °C
1.5
175 °C, 98%
140
2008-04-14
180
2.0