ipd06n03lzg Infineon Technologies Corporation, ipd06n03lzg Datasheet - Page 7

• Manufacturer Part Number: ipd06n03lzg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.7
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
29
28
27
26
25
24
23
22
21
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
150 °C
10
20
t
T
AV
j
60
[°C]
[µs]
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=25 A pulsed
g s
IPS06N03LZ G
10
Q
Q
gate
g
Q
sw
[nC]
Q
20
g d
IPD06N03LZ G
IPU06N03LZ G
5 V
30
15 V
Q
20 V
g ate
2008-04-14