ph2729-5m M/A-COM Technology Solutions, Inc., ph2729-5m Datasheet

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ph2729-5m

Manufacturer Part Number
ph2729-5m
Description
Radar Pulsed Power Transistor 2.7-2.9 100??s Pulse, Duty
Manufacturer
M/A-COM Technology Solutions, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PH2729-5M
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
PH2729-5M
Manufacturer:
MA/COM
Quantity:
20 000
1
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Electrical Specifications: T
PH2729-5M
Absolute Maximum Ratings at 25°C
Radar Pulsed Power Transistor
5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Collector-Emitter Breakdown Voltage I
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Parameter
Parameter
Symbol
V
V
P
T
T
CES
EBO
I
TOT
STG
C
J
V
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
Vcc = 36V, Pin = 1.0W
C
CE
= 10mA
C
Test Conditions
= 40V
= 25 ± 5°C (
-65 to +200
Rating
3.0
0.7
200
65
50
Room Ambient
Units
°C
°C
W
V
V
A
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Frequency
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Outline Drawing
)
Symbol
VSWR-T
VSWR-S
R
BV
P
I
TH(JC)
RL
G
η
CES
OUT
CES
C
P
M/A-COM Products
Released, 29 Jun 07
Min
5.0
7.0
65
30
-
-
-
-
-
Max
1.5:1
1.5
3.5
3:1
-6
-
-
-
-
Units
°C/W
mA
dB
dB
W
%
V
-
-

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ph2729-5m Summary of contents

Page 1

... PH2729-5M Radar Pulsed Power Transistor 5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • ...

Page 2

... PH2729-5M Radar Pulsed Power Transistor 5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Typical RF Performance Freq. Pin Pout (GHz) (W) (W) 2.7 1.0 5.6 2.8 1.0 6.1 2.9 1.0 6.2 Gain vs. Frequency 8.6 8.2 7.8 7.4 7.0 2.70 2.75 2.80 Fre q (GHz) RF Test Fixture Impedance F (GHz) Z (Ω j12 2 j16 3 j18 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements ...

Page 3

... PH2729-5M Radar Pulsed Power Transistor 5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions Test Fixture Assembly 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...

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