ph3134-10m M/A-COM Technology Solutions, Inc., ph3134-10m Datasheet
ph3134-10m
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ph3134-10m Summary of contents
Page 1
... PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • ...
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... PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Typical RF Performance Freq. Pin Pout (GHz) (W) (W) 3.10 0.58 10.0 3.25 0.61 10.0 3.40 0.78 10.0 Gain vs. Frequency 13.0 12.0 11.0 10.0 9.0 3.10 3.18 3.25 Fre q (GHz) RF Test Fixture Impedance F (GHz) Z (Ω) IF 3.10 17.5 - j8.5 3.25 15.0 - j8.2 3.40 13.0 - j8.0 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements ...
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... PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions Test Fixture Assembly 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...