mrf7s35120hs Freescale Semiconductor, Inc, mrf7s35120hs Datasheet
mrf7s35120hs
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... Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 150 mA Volts 900 mA Bursts, 4 Operation DD Document Number: MRF7S35120HS Rev. 2, 11/2008 MRF7S35120HSR3 3100 - 3500 MHz, 120 W PEAK PULSED LATERAL N - CHANNEL RF POWER MOSFET CASE 465A - 06, STYLE 780S Symbol Value Unit V - 0.5, +65 ...
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... W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Input Rise Time Output Pulse Droop (500 μsec Pulse Width, 10% Duty Cycle) Load Mismatch Tolerance (VSWR = 10:1 at all Phase Angles) 1. Part internally matched both on input and output. MRF7S35120HSR3 2 = 25°C unless otherwise noted) C Symbol I ...
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... Microstrip Z12 0.120″ x 0.175″ Microstrip Z13 0.087″ x 0.576″ Microstrip Figure 1. MRF7S35120HSR3 Test Circuit Schematic Table 5. MRF7S35120HSR3 Test Circuit Component Designations and Values Part B1 47 Ω, 100 MHz Short Ferrite Bead C1 470 μ Electrolytic Capacitor C2 47 μ ...
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... C10 Figure 2. MRF7S35120HSR3 Test Circuit Component Layout MRF7S35120HSR3 MRF7S35120HS Rev. 3a Freescale Semiconductor C4 RF Device Data ...
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... Actual Vdc 150 mA 3500 MHz DD DQ Pulse Width = 100 μsec, Duty Cycle = 20 INPUT POWER (dBm) PULSED in Input Power 100 P , OUTPUT POWER (WATTS) PULSED out Output Power MRF7S35120HSR3 100 200 5 ...
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... Figure 11. Pulsed Power Gain and Drain Efficiency 15 V Pulse Width = 100 μsec, Duty Cycle = 20% 13.5 12 10 Figure 12. Pulsed Power Gain and Drain Efficiency MRF7S35120HSR3 6 TYPICAL CHARACTERISTICS Vdc, I 3500 MHz 25_C DD Pulse Width = 100 μsec, Duty Cycle = 20% 13 10.5 3100 MHz 85_C ...
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... OUTPUT POWER (dBm) out 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° 120 W Peak, Pulse Width = 100 μsec Vdc out = 40 −9 −18 −27 −36 3450 3500 21 20 RCE 19 18 η 13.6 15 13 12.8 11 12.6 43.5 44 230 250 MRF7S35120HSR3 7 ...
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... Z load f = 3500 MHz f = 2900 MHz Figure 16. Series Equivalent Source and Load Impedance MRF7S35120HSR3 Ω 3500 MHz f = 2900 MHz Z source Vdc 150 mA 120 W Peak DD DQ out source load MHz W W 2900 0.825 - j4.72 6.03 - j0.487 3100 1.1 - j6.74 4.63 - j0.0472 3300 3.95 - j10.8 2 ...
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... M R 0.365 0.375 9.27 9.53 S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF7S35120HSR3 9 ...
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... Initial Release of Data Sheet 1 June 2008 • Corrected P 2 Nov. 2008 • Updated Fig. 15, MTTF versus Junction Temperature, to correct a calculation error MRF7S35120HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description error and changed from 42.5 Watts to 18 Watts, Typical WiMAX Performance bullet out ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF7S35120HS Rev. 2, 11/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...