mrf7s35120hs Freescale Semiconductor, Inc, mrf7s35120hs Datasheet - Page 5

• Manufacturer Part Number: mrf7s35120hs
• Description: N - Channel Enhancement - Mode Lateral Mosfet
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
1000
100
0.1
13
12
10
14
13
12
10
11
11
10
9
9
8
8
1
Figure 3. Capacitance versus Drain - Source Voltage
Figure 5. Pulsed Power Gain and Drain Efficiency
0
3
1
Measured with ±30 mV(rms)ac @ 1 MHz
V
3100 MHz
GS
= 0 Vdc
Figure 7. Pulsed Power Gain versus
5
3300 MHz
P
150 mA
P
V
f = 3500 MHz
out
out
DS
, OUTPUT POWER (WATTS) PULSED
, OUTPUT POWER (WATTS) PULSED
300 mA
I
, DRAIN−SOURCE VOLTAGE (VOLTS)
DQ
10
10
versus Output Power
V
Pulse Width = 100 μsec, Duty Cycle = 20%
500 mA
DD
= 1000 mA
= 32 Vdc, f = 3500 MHz
Output Power
10
15
C
C
iss
V
Pulse Width = 100 μsec
Duty Cycle = 20%
rss
DD
20
= 32 Vdc, I
G
ps
η
25
D
DQ
C
TYPICAL CHARACTERISTICS
= 150 mA
oss
100
30
100
200
200
35
50
41
32
23
14
5
100
56
55
54
53
52
51
50
49
48
13
12
10
11
10
6
9
8
7
1
36
3
1
P1dB = 51.3 dBm (135 W)
I
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
T
C
= 150 mA, f = 3500 MHz
P2dB = 51.7 dBm (149 W)
37
Figure 6. Pulsed Output Power versus
= 25°C
Figure 8. Pulsed Power Gain versus
Figure 4. DC Safe Operating Area
P
V
38
out
DS
P
, OUTPUT POWER (WATTS) PULSED
, DRAIN−SOURCE VOLTAGE (VOLTS)
in
10
, INPUT POWER (dBm) PULSED
P3dB = 52 dBm (157 W)
39
V
Pulse Width = 100 μsec, Duty Cycle = 20%
Output Power
Input Power
DD
= 32 Vdc, I
40
10
41
DQ
T
J
= 150 mA, f = 3500 MHz
= 150°C
42
MRF7S35120HSR3
V
T
DD
J
= 200°C
= 24 V
43
Actual
100
T
Ideal
J
26 V
= 175°C
44
28 V
32 V
30 V
200
100
45
5