mrf7s35120hs Freescale Semiconductor, Inc, mrf7s35120hs Datasheet - Page 7

• Manufacturer Part Number: mrf7s35120hs
• Description: N - Channel Enhancement - Mode Lateral Mosfet
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Figure 14. Single - Channel OFDM Relative Constellation Error,
13.5
12.5
10.5
11.5
−28
−29
−30
−31
−32
−33
−34
−35
−36
−37
−38
10
10
10
10
14
13
12
10
11
3100
8
7
6
5
90
41
Drain Efficiency and Gain versus Output Power
Figure 15. MTTF versus Junction Temperature
Figure 13. Pulsed Power Gain, Drain Efficiency
This above graph displays calculated MTTF in hours when the device
is operated at V
Duty Cycle = 20%, and η
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
V
Single−Carrier OFDM 802.16d, 64 QAM
4 Bursts, 7 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
DD
V
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
3150
= 32 Vdc, I
110
= 32 Vdc, I
41.5
IRL
TYPICAL CHARACTERISTICS
3200
130
T
and IRL versus Frequency
J
DD
DQ
, JUNCTION TEMPERATURE (°C)
P
= 32 Vdc, P
DQ
= 900 mA, f = 3500 MHz
out
42
= 150 mA, P
, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
150
3250
D
G
= 40%.
ps
out
3300
170
42.5
= 120 W Peak, Pulse Width = 100 μsec,
out
= 120 W
3350
190
3
/
4
43
η
D
3400
G
210
ps
RCE
43.5
3450
η
230
D
3500
44
250
21
20
19
18
17
16
15
14
13
12
43
42
41
40
−9
−18
−27
−36
11
13.6
13.4
13.2
13
12.8
12.6
MRF7S35120HSR3
7