mrf6v2150n Freescale Semiconductor, Inc, mrf6v2150n Datasheet - Page 5

• Manufacturer Part Number: mrf6v2150n
• Description: Rf Power Field - Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
1000
100
10
Figure 4. Capacitance versus Drain - Source Voltage
1
0
5
4
3
2
1
0
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
Figure 6. DC Drain Current versus Drain Voltage
0
5
Figure 8. Third Order Intermodulation Distortion
V
Two −Tone Measurements, 100 kHz Tone Spacing
336 mA
DD
I
DQ
450 mA
= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
20
563 mA
10
= 225 mA
V
DS
10
C
C
C
oss
iss
rss
, DRAIN−SOURCE VOLTAGE (VOLTS)
P
out
DRAIN VOLTAGE (VOLTS)
40
versus Output Power
, OUTPUT POWER (WATTS) PEP
685 mA
Measured with ±30 mV(rms)ac @ 1 MHz
V
20
GS
= 0 Vdc
60
2.5 V
30
900 mA
80
2.63 V
V
GS
= 3 V
TYPICAL CHARACTERISTICS
100
40
100
2.75 V
2.25 V
120
50
300
100
27
26
25
24
23
22
21
58
56
54
52
50
48
10
1
22
1
Figure 9. CW Output Power versus Input Power
1
225 mA
Figure 7. CW Power Gain versus Output Power
337 mA
450 mA
I
T
P1dB = 52.27 dBm (168.66 W)
DQ
C
563 mA
= 25°C
= 675 mA
Figure 5. DC Safe Operating Area
24
P3dB = 52.61 dBm (182.39 W)
V
DS
P
, DRAIN−SOURCE VOLTAGE (VOLTS)
out
, OUTPUT POWER (WATTS) CW
P
in
MRF6V2150NR1 MRF6V2150NBR1
, INPUT POWER (dBm)
26
10
10
V
f = 220 MHz
DD
28
V
f = 220 MHz
= 50 Vdc, I
DD
= 50 Vdc
DQ
30
= 450 mA
100
100
Actual
Ideal
200
200
32
5