mrf6v2150n Freescale Semiconductor, Inc, mrf6v2150n Datasheet - Page 8

• Manufacturer Part Number: mrf6v2150n
• Description: Rf Power Field - Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF6V2150NR1 MRF6V2150NBR1
8
D1
NOTE 7
A2
aaa
GATE LEAD
A1
M
4X
b1
c1
C
D3
D2
2X
A
H
4
3
DATUM
PLANE
B
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
ZONE J
F
BOTTOM VIEW
E1
E5
E2
2X
E3
2X
E4
E5
2X
E
PACKAGE DIMENSIONS
DRAIN LEAD
C
MRF6V2150NR1
CASE 1486 - 03
PIN 5
TO - 270 WB - 4
SEATING
PLANE
PLASTIC
1
2
ISSUE C
NOTE 8
4X
e
A
A
D
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
6. DATUMS −A− AND −B− TO BE DETERMINED AT
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
PER ASME Y14.5M−1994.
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DATUM PLANE −H−.
OF THE HEAT SLUG.
STYLE 1:
DIM
aaa
A1
A2
D1
D2
D3
E1
E2
E3
E4
E5
b1
c1
A
D
E
F
e
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MIN
.100
.039
.040
.712
.688
.011
.600
.551
.353
.132
.124
.270
.346
.164
.007
.025 BSC
.106 BSC
INCHES
.004
MAX
.104
.043
.042
.720
.692
.019
.559
.357
.140
.132
.350
.170
.011
Freescale Semiconductor
− − −
− − −
18.08
17.48
15.24
MILLIMETERS
MIN
2.54
0.99
1.02
0.28
8.97
3.35
3.15
6.86
8.79
4.17
0.18
14
0.64 BSC
2.69 BSC
0.10
RF Device Data
MAX
18.29
17.58
2.64
1.09
1.07
0.48
14.2
9.07
3.56
3.35
8.89
4.32
0.28
− − −
− − −