mrf6v2150n Freescale Semiconductor, Inc, mrf6v2150n Datasheet - Page 6

• Manufacturer Part Number: mrf6v2150n
• Description: Rf Power Field - Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF6V2150NR1 MRF6V2150NBR1
6
26
24
22
20
18
16
14
28
27
26
25
24
23
22
21
0
5
25_C
85_C
Figure 10. Power Gain versus Output Power
Figure 12. Power Gain and Drain Efficiency
T
C
= −30_C
10
V
DD
P
50
η
P
= 20 V
versus CW Output Power
out
D
out
25 V
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) CW
30 V
G
ps
100
35 V
40 V
V
f = 220 MHz
I
DQ
DD
85_C
= 450 mA
= 50 Vdc
150
TYPICAL CHARACTERISTICS
45 V
I
f = 220 MHz
100
DQ
25_C
= 450 mA
50 V
−30_C
200
200
80
70
60
50
40
30
20
10
10
10
10
10
55
50
45
40
35
8
7
6
5
90
10
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 11. Power Output versus Power Input
110
15
T
130
J
DD
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
25_C
P
150
in
, INPUT POWER (dBm)
20
T
C
out
170
= −30_C
= 150 W CW, and η
Freescale Semiconductor
25
190
V
I
f = 220 MHz
DQ
85_C
DD
210
RF Device Data
= 450 mA
= 50 Vdc
D
30
= 68.3%.
230
250
35