2sj218 Renesas Electronics Corporation., 2sj218 Datasheet
2sj218
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2sj218 Summary of contents
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... Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ218 ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes µs, duty cycle 2. Value 25° Symbol Ratings V – ...
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... R — 670 — ns — 450 — ns — –1.35 — — 300 — 2SJ218 = –10 mA ±100 µ ± – –1 mA – – – – –4 V* ...
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... APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 2SJ218 5 ...