2sj208 Renesas Electronics Corporation., 2sj208 Datasheet
2sj208
Manufacturer Part Number
2sj208
Description
P-channel Mos Fet For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SJ208.pdf
(4 pages)
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Document No. D18277EJ4V0DS00 (4th edition)
Date Published July 2006 NS CP(K)
Printed in Japan
<R>
(Previous No. TC-2330A)
DESCRIPTION
which can be driven by 2.5 V power supply.
consideration of driving current, it is suitable for appliances including
VCR cameras and headphone stereos which need power saving.
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its
• Possible to reduce the number of parts by omitting the bias
• Has low on-state resistance
ABSOLUTE MAXIMUM RATINGS (T
The 2SJ208, P-channel vertical type MOS FET, is a switching device
As the MOS FET is driven by low voltage and does not require
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
high input impedance.
resistor.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R
R
DS(on)
DS(on)
2. When using ceramic board of 16 cm
= 3.0 Ω MAX.
= 1.0 Ω MAX.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note 1
Note 2
DS
GS
V
V
= 0 V)
= 0 V)
GS
GS
= －2.5 V, I
= －4.0 V, I
The mark <R> shows major revised points.
I
D(pulse)
V
V
I
D(DC)
T
T
D
D
P
GSS
DSS
stg
ch
T
A
P-CHANNEL MOS FET
= －30 mA
= －1.0 A
= 25°C)
2
FOR SWITCHING
× 0.7 mm
DATA SHEET
−55 to +150
m2.0
m4.0
−16
m16
150
2.0
MOS FIELD EFFECT TRANSISTOR
°C
°C
W
V
V
A
A
PACKAGE DRAWING (Unit: mm)
2SJ208
1991, 2006
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2sj208 Summary of contents
Page 1
... DESCRIPTION The 2SJ208, P-channel vertical type MOS FET switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current suitable for appliances including VCR cameras and headphone stereos which need power saving. ...
Page 2
... Data Sheet D18277EJ4V0DS 2SJ208 ...
Page 3
... Data Sheet D18277EJ4V0DS 2SJ208 3 ...
Page 4
... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ208 Not all M8E 02. 11-1 ...