2sj319l Renesas Electronics Corporation., 2sj319l Datasheet
2sj319l
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2sj319l Summary of contents
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Silicon P Channel MOS FET Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) ...
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Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. ...
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Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –5 –10 V Pulse Test –4 –3 –2 – –4 –8 Drain to Source Voltage Drain to ...
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Static Drain to Source on State Resistance vs. Temperature – – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 ...
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0.5 0.3 0.1 0.03 0.01 10 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω –10 V Rev.2.00 Sep 07, 2005 page Reverse Drain Current vs. Source to ...
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Package Dimensions JEITA Package Code RENESAS Code PRSS0004ZD-A 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 JEITA Package Code RENESAS Code SC-63 PRSS0004ZD-C (0.1) 1.0 Max. 2.29 ± 0.5 Rev.2.00 Sep 07, 2005 page 6 of ...
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... Ordering Information Part Name 2SJ319L-E 3200 pcs 2SJ319STL-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page Quantity Box (Sack) ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...