2sj673 Renesas Electronics Corporation., 2sj673 Datasheet

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2sj673

Manufacturer Part Number
2sj673
Description
Switching P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
2SJ673
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Document No. D17210EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Super low on-state resistance
• Low C
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
designed for high current switching applications.
R
R
The 2SJ673 is P-channel MOS Field Effect Transistor
DS(on)1
DS(on)2
2. Starting T
iss
= 20 mΩ MAX. (V
= 31 mΩ MAX. (V
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 4600 pF TYP.
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
Note2
DS
C
A
GS
GS
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
= −10 V, I
= −4.0 V, I
DD
= −30 V, R
P-CHANNEL POWER MOS FET
D
D
= −18 A)
= −18 A)
I
A
I
D(pulse)
V
V
D(DC)
P
P
T
E
T
I
= 25°C)
GSS
DSS
AS
G
stg
AS
T1
T2
ch
DATA SHEET
= 25 Ω, V
SWITCHING
−55 to +150
GS
MOS FIELD EFFECT TRANSISTOR
m144
150
130
−60
m20
m36
−36
= 20 → 0 V
2.0
32
ORDERING INFORMATION
PART NUMBER
mJ
°C
°C
2SJ673
W
W
V
V
A
A
A
(Isolated TO-220)
Isolated TO-220 (MP-45F)
2SJ673
PACKAGE
2004

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2sj673 Summary of contents

Page 1

... DESCRIPTION The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance = − mΩ MAX. (V DS(on −4 mΩ MAX. (V DS(on)2 GS • Low 4600 pF TYP. iss iss • Built-in gate protection diode ...

Page 2

... µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG (− τ µ τ Duty Cycle ≤ 1% Data Sheet D17210EJ1V0DS 2SJ673 MIN. TYP. MAX. UNIT − µ µ A m10 − − − 1.5 2.0 2 mΩ mΩ ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 µs 100 µ -100 R = 62.5°C/W th(ch-A) R th(ch- 100 Pulse Width - s Data Sheet D17210EJ1V0DS 2SJ673 50 75 100 125 150 175 T - Case Temperature - ° 3.9°C/W Single pulse 100 1000 3 ...

Page 4

... V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -4 Pulsed - -50 -1000 Data Sheet D17210EJ1V0DS 2SJ673 Pulsed V = − −4.5 V − Drain to Source Voltage - V DS Pulsed = −28 −18 A −7 -10 -12 -14 -16 -18 -20 ...

Page 5

... G 1 -100 -0.1 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 12 1000 100 0.1 100 I - Diode Forward Current - A F Data Sheet D17210EJ1V0DS 2SJ673 0 V Pulsed -1 -1 d(off d(on) -1 -10 -100 I - Drain Current - A D di/dt = 100 A/µ 100 5 ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Starting T - Starting Channel Temperature - °C ch Data Sheet D17210EJ1V0DS 2SJ673 V = − Ω −20 → ≤ − 100 125 150 ...

Page 7

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this debice. 2.7±0.2 2.5±0.1 Data Sheet D17210EJ1V0DS 2SJ673 7 ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ673 Not all M8E 02. 11-1 ...

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