2sj161 Renesas Electronics Corporation., 2sj161 Datasheet
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2sj161
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2sj161 Summary of contents
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... Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier ...
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... Absolute Maximum Ratings Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value Electrical Characteristics Item Drain to source breakdown 2SJ160 ...
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... Main Characteristics Power vs. Temperature Derating 150 100 Case Temperature Typical Output Characteristics –10 –9 –8 –8 –7 –6 –6 –5 –4 –4 –3 – –10 –20 –30 Drain to Source Voltage Drain to Source Saturation Voltage vs. ...
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... Input Capacitance vs. Gate to Source Voltage 1000 500 200 100 Gate to Source Voltage V Switching Time Test Circuit Input µs 50 Ω duty ratio = 1% Rev.2.00 Sep 07, 2005 page 0.03 0. – MHz 0.003 (V) GS Switching Time vs. Drain Current ...
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... Package Dimensions JEITA Package Code RENESAS Code SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part Name 2SJ160-E 360 pcs 2SJ161-E 360 pcs 2SJ162-E 360 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...