2sj538 Sanyo Semiconductor Corporation, 2sj538 Datasheet

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2sj538

Manufacturer Part Number
2sj538
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Ordering number : ENA0519
2SJ538
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Low ON-resistance.
4V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOSFET
Load Switching Applications
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
SANYO Semiconductors
PW 10 s, duty cycle 1%
Tc=25 C
I D =--1mA, V GS =0V
V DS =- -30V, V GS =0V
V GS = 16V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -8A
I D =--8A, V GS =- -10V
I D =--4A, V GS =- -4V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
2SJ538
Conditions
Conditions
DATA SHEET
O0406PA MS IM TC-00000219
min
--1.0
--30
10
Ratings
typ
2000
1000
Ratings
470
15
24
40
Continued on next page.
--55 to +150
max
--100
150
--2.5
--30
--15
--45
1.0
20
30
10
30
52
No. A0519-1/4
Unit
Unit
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A

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2sj538 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SJ538 SANYO Semiconductors Symbol Conditions ...

Page 2

... V DS =--10V -10V =--8A Qgd V DS =--10V -10V =-- =--8A =0V Package Dimensions unit : mm (typ) 7003-004 6.5 0.5 5.0 4 0. Gate 2 : Drain 3 : Source 4 : Drain 2.3 SANYO : TP V OUT 2SJ538 Ratings min typ max 20 70 210 140 --1.0 --1.5 2.3 0 Gate 1 Drain 3 : Source 4 : Drain 2 ...

Page 3

... Drain Current Time -- 100 (on --0.1 --1.0 Drain Current 2SJ538 -- --10V --18 --16 --14 --12 --10 --8 -- --3V --4 --2 0 --0.8 --1.0 0 --0.5 IT11532 80 Ta= --16 --18 --20 --60 ...

Page 4

... Amibient Tamperature Note on usage : Since the 2SJ538 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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