sum110n08-07p Vishay, sum110n08-07p Datasheet
sum110n08-07p
Related parts for sum110n08-07p
sum110n08-07p Summary of contents
Page 1
... R (Ω) DS DS(on) 0.007 TO-263 Top View Ordering Information: SUM110N08-07P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SUM110N08-07P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 100 ° 0.05 0.04 0.03 0.02 0.01 0.00 80 100 120 SUM110N08-07P Vishay Siliconix T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ° ° 125 °C C ...
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... SUM110N08-07P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6000 C 4500 iss 3000 1500 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 1.7 V 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.7 0.2 - 0.3 - 0.8 - 1.3 - 1 Temperature (°C) J Threshold Voltage www ...
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... It is used to determine the current rating, when this rating falls below the package limit Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N08-07P Vishay Siliconix Limited DS(on °C C Single Pulse ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...