sum110n08-07p Vishay, sum110n08-07p Datasheet - Page 5

• Manufacturer Part Number: sum110n08-07p
• Description: N-channel 75-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 68637
S-81049-Rev. A, 12-May-08
100
150
120
Single Pulse Avalanche Current Capability vs. Time
10
0
90
60
30
0.01
1
0 .
0
0.1
0
0
1
0
10
0
http://www.vishay.com/ppg?68637.
1
-4
Package Limited
Current Derating*, Junction-to-Case
Duty Cycle = 0.5
0.2
0.1
0.0001
150 °C
25
Single Pulse
T
C
- Case Temperature (°C)
50
0.001
0.02
T
25 °C
AV
75
0.05
(s)
0.01
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
-3
0
125
1 .
Square Wave Pulse Duration (s)
150
1.0
* The power dissipation P
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used.
It is used to determine the current rating, when this rating falls below
the package limit.
10
-2
1000
0.01
100
0.1
10
1
0.1
* V
Safe Operating Area, Junction-to-Case
GS
Single Pulse
T
> minimum V
C
V
= 25 °C
DS
Limited by R
- Drain-to-Source Voltage (V)
1
D
GS
is based on T
10
at which R
DS(on)
-1
SUM110N08-07P
*
Vishay Siliconix
DS(on)
10
BVDSS
J(max)
is specified
= 150 °C, using
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100
10 µs
100 µs
1 ms
10 ms
100 ms, DC
1
5