sum110n08-07p Vishay, sum110n08-07p Datasheet - Page 2

• Manufacturer Part Number: sum110n08-07p
• Description: N-channel 75-v D-s Mosfet
• Manufacturer: Vishay

SUM110N08-07P
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
I
Symbol
R
RM(REC)
V
I
t
t
I
C
V
I
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
I
t
oss
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
g
C
= 25 °C
V
V
V
V
V
I
DS
DS
D
GS
DS
GS
≅ 50 A, V
I
= 75 V, V
= 75 V, V
= 10 V, I
F
V
= 30 V, V
V
= 0 V, V
V
V
V
V
V
b
= 75 A, dI/dt = 100 A/µs
DS
V
DS
DS
DD
I
DS
DS
F
DS
GS
Test Conditions
= 20 A, V
= 0 V, V
= V
≥ 10 V, V
= 0 V, I
= 30 V, R
= 75 V, V
= 10 V, I
= 15 V, I
f = 1 MHz
GEN
D
GS
DS
GS
GS
GS
= 20 A, T
, I
= 30 V, f = 1 MHz
= 0 V, T
= 0 V, T
= 10 V, R
D
= 10 V, I
GS
D
GS
GS
= 250 µA
D
D
L
GS
= 250 µA
= ± 20 V
= 20 A
= 20 A
= 0.6 Ω
= 0 V
= 10 V
= 0 V
J
J
J
= 125 °C
= 125 °C
= 150 °C
D
g
= 50 A
= 1 Ω
Min.
2.5
75
70
0.0057
0.0092
4250
Typ.
0.83
580
230
1.2
2.5
43
69
23
21
17
22
65
85
5
6
S-81049-Rev. A, 12-May-08
Document Number: 68637
0.0112
± 250
0.007
Max.
250
105
110
180
100
150
4.5
2.4
1.5
50
30
10
40
15
1
5
Unit
nA
µA
pF
nC
nC
ns
ns
Ω
Ω
V
A
S
A
V
A